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IRF6616PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6616PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 05/23/07 Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS =15A. Notes: Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A Max. 15 106 150 ±20 40 19 36 15 0 1020 3040 QG Total Gate Charge (nC) 0 1 2 3 4 5 6 VDS= 32V VDS= 20V ID= 15A Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom. SQ SX ST MQ MX MT MP l RoHS compliant containing no lead or bormide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l Lead-Free 2.0 4.0 6.0 8.0 10.0 VGS, Gate-to-Source Voltage (V) 0 2.0 4.0 6.0 8.0 10 12 TJ = 25°C TJ = 125°C ID = 19A IRF6616PbF IRF6616TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 40V max ±20V max 3.7m Ω@ 10V 4.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 29nC 9.4nC 2.4nC 33nC 15nC 1.8V DirectFET ISOMETRIC MX PD - 96100 |
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