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IRF6729MTRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF6729MTRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6729MTRPbF 2 www.irf.com Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 4.0 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.4 1.8 m Ω ––– 2.2 2.7 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 100 µA ––– ––– 5.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 120 ––– ––– S Qg Total Gate Charge ––– 42 63 Qgs1 Pre-Vth Gate-to-Source Charge ––– 11 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.9 ––– nC Qgd Gate-to-Drain Charge ––– 14 ––– Qgodr Gate Charge Overdrive ––– 12.1 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 18.9 ––– Qoss Output Charge ––– 29 ––– nC RG Gate Resistance ––– 1.3 2.2 Ω td(on) Turn-On Delay Time ––– 22 ––– tr Rise Time –––37––– ns td(off) Turn-Off Delay Time ––– 20 ––– tf Fall Time ––– 15 ––– Ciss Input Capacitance ––– 6030 ––– Coss Output Capacitance ––– 1360 ––– pF Crss Reverse Transfer Capacitance ––– 560 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 31 (Body Diode) A ISM Pulsed Source Current ––– ––– 250 (Body Diode)Ãg VSD Diode Forward Voltage ––– ––– 0.80 V trr Reverse Recovery Time ––– 30 45 ns Qrr Reverse Recovery Charge ––– 40 60 nC MOSFET symbol RG = 1.8Ω VDS = 15V, ID = 25A Conditions See Fig. 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V VGS = 20V VGS = -20V VDS = 24V, VGS = 0V VDS = 15V VDS = 24V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 10mA VGS = 10V, ID = 31A i VGS = 4.5V, ID = 25A i VDS = VGS, ID = 10mA VDS = VGS, ID = 150µA TJ = 25°C, IF = 25A VGS = 4.5V ID = 25A VGS = 0V VDS = 15V ID = 25A VDD = 15V, VGS = 4.5VÃi di/dt = 300A/µs i TJ = 25°C, IS = 25A, VGS = 0V i showing the integral reverse p-n junction diode. |
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