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SD5501N Datasheet(PDF) 2 Page - Calogic, LLC |
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SD5501N Datasheet(HTML) 2 Page - Calogic, LLC |
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2 / 2 page  SD5501 LLC ABSOLUTE MAXIMUM RATINGS (TA = +25 oC unless otherwise noted) VDS Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . +30 Vdc VSD Source-Drain Voltage. . . . . . . . . . . . . . . . . . . . +0.5 Vdc VDB Drain-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +30 Vdc VSB Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . +15 Vdc VGS Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . +25 Vdc VGB Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . . +25 Vdc Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . -0.3 Vdc VGD Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +25 Vdc ID Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA PD Total Package Power Dissipation (at or below TA = +25 oC) . . . . . . . . . . . . . . . . . 640 mW Linear Derating Factor . . . . . . . . . . . . . . . . 10.7 mW/ oC PD Single Device Power Dissipation (at or below TA = +25 oC) . . . . . . . . . . . . . . . . . 300 mW Linear Derating Factor . . . . . . . . . . . . . . . . . 5.0 mW/ oC Tj Operating Junction Temperature Range . . -55 to +85 oC TS Storage Temperature Range . . . . . . . . . -55 to + 150 oC ELECTRICAL CHARACTERISTCIS (TA = +25 oC unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS STATIC BVDS Drain-Source Breakdown Voltage 20 V ID = 10 nA, VGS = VBS = -5.6V BVSD Source-Drain Breakdown Voltage 10 IS = 10 nA, VGD = VBD = -5.6V BVDB Drain-Body Breakdown Voltage 25 ID = 10nA, VGB = 0, Source Open BVSB Source-Body Breakdown Voltage 15 IS = 10 µA, VGB = 0, Drain Open IGSS(fwd) Forward Gate Leakage Current 1.0 nA VGS = 25V, VDS = VBS = 0 IG Gate Operating Current -3.0 -100 pA VDG = 15V, ID = 5.0 mA, VBS = -5.6V -0.7 -10 nA TA = +125 oC VGS (off) Gate - Source Cutoff Voltage -1.0 -5.0 V VDS = 10V, ID = 1.0 µA, VBS = 5.6V VGS (on) Gate-Source On Voltage -0.3 -3.0 VDG = 10V, ID = 5mA, VSB = -5.6V IDSX Zero Gate Voltage Drain Current 7.0 40 mA VDS = 10V, VGS = 0, VBS = -5.6V 5.0 TA = +125 oC rDS (ON) Drain-Source On Resistance 100 150 ohms ID = 1.0mA, VGS = 0, VBS = -5.6V DYNAMIC gfs Common-Source Forward Transconductance (1) 6.0 7.5 12 mS VDG = 10V ID = 5.0mA VBS = -5.6V f = 1 KHz gos Common-Source Output Conductance 200 350 µS Ciss Common-Source Input Capacitance 3.5 pF f = 1 MHz Coss Common-Source Output Capacitance 1.2 Crss Common-Source Reverse Transfer Capacitance 0.3 C(gs + sb) Source Node Capacitance 4.5 MATCHING VGSM Gate Source Voltage Match 50 mV VDG = 10V, ID = 5.0mA, VBS = -5.6V rDS(on) Drain-Source On Resistance Match 10% ID = 1.0 mA, VGS = 0, VBS = 5.6V IDXSM Zero Gate Voltage Drain Current Match 10% VDG = 10V, ID = 5.0 mA, VBS = -5.6V gfsm Transconductance Match (1), (2) 10% f = 1 KHz Note 1: Pulse Test, 80 sec, 1% Duty Cycle Note 2: Match of 4 channels CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS065 REV A |
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