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2SB1403 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB1403 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1403 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE== -120 V V(BR)CBO Collector-base breakdown voltage IC=-100µA; IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-6A ;IB=-60mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-3A ;IB=-6mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-6A ;IB=-60mA -3.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA ICEO Collector cut-off current VCE=-100V; RBE== -10 µA hFE DC current gain IC=-3A ; VCE=-3V 1000 20000 VD Diode forward voltage ID=6A 3.0 V |
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