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MIMMG300DR170B Datasheet(PDF) 2 Page - Micross Components |
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MIMMG300DR170B Datasheet(HTML) 2 Page - Micross Components |
2 / 5 page MIMMG300DR170B ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=20mA 5.3 5.8 6.3 V IC=300A, VGE=15V, TVj=25°C 2.30 V IC=300A, VGE=15V, TVj=125°C 2.65 V VCE(sat) Collector - Emitter Saturation Voltage IC=300A, VGE=15V, TVj=150°C 2.75 V VCE=1700V, VGE=0V, TVj=25°C 0.5 mA VCE=1700V, VGE=0V, TVj=125°C 2.5 mA ICES Collector Leakage Current VCE=1700V, VGE=0V, TVj=150°C 4.0 mA IGES Gate Leakage Current VCE=0V, VGE=±15V, TVj=125°C -500 500 nA Qge Gate Charge VCE=900V, IC=300A , VGE=±15V 1.8 µC Cies F n 0 2 e c n a ti c a p a C t u p n I Coes Output Capacitance 1.06 nF Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz 0.74 nF TVj =25°C 450 ns TVj =125°C 480 ns td(on) Turn - on Delay Time TVj =150°C 490 ns TVj =25°C 385 ns TVj =125°C 405 ns tr Rise Time VCC=900V, IC=300A, RG =7.5Ω, VGE=±15V, Inductive Load TVj =150°C 405 ns TVj =25°C 910 ns TVj =125°C 1020 ns td(off) Turn - off Delay Time TVj =150°C 1060 ns TVj =25°C 420 ns TVj =125°C 485 ns tf Fall Time VCC=900V, IC=300A, RG =7.5Ω, VGE=±15V, Inductive Load TVj =150°C 495 ns TVj =125°C 72 mJ Eon Turn - on Switching Energy TVj =150°C 84 mJ TVj =125°C 138 mJ Eoff Turn - off Switching Energy VCC=900V,IC=300A, RG =7.5Ω, VGE=±15V, Inductive Load TVj =150°C 146 mJ ISC Short Circuit Current tpsc≤10µS , VGE=15V, TVj=150°C VCC=1300V, VCEMCHIP≤1700V 980 A Free-Wheeling Diode IF=300A , VGE=0V, TVj =25°C 2.2 V VF Forward Voltage IF=300A , VGE=0V, TVj =150°C 2.45 V IRRM A 5 3 2 t n e rr u C y r e v o c e R e s r e v e R . x a M Qrr C µ 3 3 e g r a h C y r e v o c e R e s r e v e R Erec Reverse Recovery Energy IF=300A , VR=1000V diF/dt=-1000A/μs TVj =125°C 48 mJ |
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