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MIMMG200S060B6N Datasheet(PDF) 2 Page - Micross Components |
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MIMMG200S060B6N Datasheet(HTML) 2 Page - Micross Components |
2 / 5 page MIMMG200S060B6N ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA 4.5 5.5 6.5 V IC=200A, VGE=15V, TJ=25°C 1.95 2.45 V VCE(sat) Collector - Emitter Saturation Voltage IC=200A, VGE=15V, TJ=125°C 2.2 V VCE=600V, VGE=0V, TJ=25°C 0.5 mA ICES Collector Leakage Current VCE=600V, VGE=0V, TJ=125°C 1 mA IGES Gate Leakage Current VCE=0V, VGE=±20V -0.6 0.6 μA RGint Integrated Gate Resistor 5 7 Ω Qge Gate Charge VCC=300V, IC=200A , VGE=±15V 890 nC Cies Input Capacitance 9 nF Coes Output Capacitance 0.9 nF Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz 0.8 nF td(on) Turn - on Delay Time 163 ns tr Rise Time 43 ns td(off) Turn - off Delay Time 253 ns tf Fall Time VCC=300V, IC=200A RG =1.5Ω,VGE=±15V TJ=25°C Inductive Load 33 ns td(on) Turn - on Delay Time 180 ns tr Rise Time 49 ns td(off) Turn - off Delay Time 285 ns tf Fall Time VCC=300V, IC=200A RG =1.5Ω,VGE=±15V TJ=125°C Inductive Load 41 ns 3 mJ Eon Turn - on Switching Energy 4.6 mJ 4.1 mJ Eoff Turn - off Switching Energy VCC=300V, IC=200A TJ=25°C RG =1.5Ω TJ=125°C VGE=±15V TJ=25°C Inductive Load TJ=125°C 6.3 mJ Free-Wheeling Diode IF=200A , VGE=0V, TJ=25°C 1.25 1.6 V VF Forward Voltage IF=200A , VGE=0V, TJ=125°C 1.2 V trr Reverse Recovery Time 249 ns IRRM Max. Reverse Recovery Current 107 A Qrr Reverse Recovery Charge IF=200A , VR=300V diF/dt=-1000A/μs TJ=125°C 15.5 µC THERMAL AND MECHANICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.17 K /W RthJCD Junction-to-Case Thermal Resistance Per Inverse Diode 0.3 K /W Torque Module-to-Sink Recommended(M6) 3 5 N· m Torque Module Electrodes Recommended(M5) 2.5 5 N· m Weight 150 g |
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