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MIMMG200DR120UA Datasheet(PDF) 4 Page - Micross Components |
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MIMMG200DR120UA Datasheet(HTML) 4 Page - Micross Components |
4 / 5 page MIMMG200DR120UA TJ =150°C TC =25°C VGE =15V VCE(V) Figure8. Typical Capacitances vs. VCE Qg(µC) Figure7. Gate Charge characteristics 0 20 25 10 15 5 0.4 0 0.8 1.2 1.6 2.0 VGE =0V f=1MHz Cies Coes Cres 0.1 1 10 0 5 10 15 20 25 30 35 TC Case Temperature(°C) Figure11. Rated Current vs. TC TJ =150°C VGE ≥15V 0 125 150 175 50 75 100 250 300 50 100 150 200 0 25 3000 3600 500 400 300 200 100 0 200 600 VCE(V) Figure9. Reverse Biased Safe Operating Area 1400 1200 1000 800 400 0 2400 1800 1200 600 00 200 400 600 800 1000 1200 VCE(V) Figure10. Short Circuit Safe Operating Area 1400 TJ =150°C TC =25°C VGE =15V tsc≤10µs TJ =25°C TJ =125°C VF(V) Figure12. Diode Forward Characteristics 0 0 100 300 400 600 500 0.5 200 1.0 1.5 2.0 2.5 3 3.5 VCC=600V IC=200A TJ =25°C 600 700 350 100 |
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