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F55NF06 Datasheet(PDF) 6 Page - Thinki Semiconductor Co., Ltd. |
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F55NF06 Datasheet(HTML) 6 Page - Thinki Semiconductor Co., Ltd. |
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6 / 6 page  TYPICAL CHARACTERISTICS(Cont.) -100 Junction Temperature, TJ (°C) -50 50 200 *Note: 1. VGS=0V 2. ID=250μA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 0 1.1 1.0 0.9 0.8 -50 50 100 150 3.0 On-Resistance Variation vs. Junction Temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature, TJ (°C) *Note: 1. VGS=10V 2. ID=25A 10 1 10 0 10 -1 Drain-Source Voltage, VDS (V) Maximum Safe Operating 10 -1 10 3 Case Temperature, TC (°C) 75 100 150 50 Maximum Drain Current vs. Case Temperature 0 125 50 25 10 20 30 40 10 0 10 1 10 2 Operation in This Area by RDS (on) *Note: 1. Tc=25°C 2. TJ=150°C 3. Single Pulse 100μs 1ms 10ms 10ms 10 2 ® 55NF06 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 6/6 Rev.02 |
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