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V23990-P541-C28-PM Datasheet(PDF) 3 Page - Vincotech

Part # V23990-P541-C28-PM
Description  Industrial drives Embedded drives
Download  23 Pages
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Manufacturer  VINCOTECH [Vincotech]
Direct Link  http://www.vincotech.com
Logo VINCOTECH - Vincotech

V23990-P541-C28-PM Datasheet(HTML) 3 Page - Vincotech

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V23990-P541-*2*-PM
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Tj=25°C
0,8
1,26
1,45
Tj=125°C
1,24
Tj=25°C
0,92
Tj=125°C
0,82
Tj=25°C
11
Tj=125°C
14
Tj=25°C
Tj=145°C
1,1
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
2,10
K/W
Tj=25°C
5
5,8
6,5
Tj=150°C
Tj=25°C
1
1,52
2,1
Tj=150°C
1,7
Tj=25°C
0,06
Tj=150°C
Tj=25°C
350
Tj=150°C
Tj=25°C
12
Tj=150°C
10
Tj=25°C
8
Tj=150°C
11
Tj=25°C
118
Tj=150°C
134
Tj=25°C
87
Tj=150°C
116
Tj=25°C
0,07
Tj=150°C
0,10
Tj=25°C
0,15
Tj=150°C
0,19
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
2,78
K/W
Tj=25°C
1
1,64
2,5
Tj=150°C
1,56
Tj=25°C
8
Tj=150°C
8
Tj=25°C
73
Tj=150°C
163
Tj=25°C
0,23
Tj=150°C
0,43
di(rec)max
Tj=25°C
569
/dt
Tj=150°C
338
Tj=25°C
0,04
Tj=150°C
0,09
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
3,68
K/W
Tj=25°C
pF
ns
A/µs
mWs
ns
A
nC
nA
V
mA
V
mWs
Rgon=32
1500
300
300
6
0,00009
25
0
480
6
600
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Fall time
Turn-off delay time
Turn-on delay time
Rise time
Gate-emitter leakage current
Reverse recovery time
Reverse recovered energy
Peak rate of fall of recovery current
Turn-on energy loss per pulse
Reverse recovered charge
Inverter Diode
Peak reverse recovery current
Reverse transfer capacitance
Diode forward voltage
Gate charge
Cies
6
6
±15
Rgon=32
0
20
15
Rgoff=16
f=1MHz
µC
Reverse current
Ir
30
30
30
V
V
m
mA
Characteristic Values
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
VF
Vto
rt
Input Rectifier Diode
Value
Conditions
Input capacitance
Output capacitance
Turn-off energy loss per pulse
Integrated Gate resistor
Inverter Transistor
Gate emitter threshold voltage
VGE(th)
VCE(sat)
ICES
Rgint
IGES
tf
Eon
Eoff
td(on)
IRRM
VF
Coss
Crss
Qrr
trr
QGate
tr
td(off)
VCE=VGE
Erec
0
±15
6
V
368
Tj=25°C
11
28
none
42
copyright Vincotech
3
Revision: 4


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