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IRFH7110TR2PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH7110TR2PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRFH7110PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 10.6 13.5 m VGS(th) Gate Threshold Voltage 2.0 3.0 4.0 V VGS(th) Gate Threshold Voltage Coefficient ––– -9.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 74 ––– ––– S Qg Total Gate Charge ––– 58 87 Qgs1 Pre-Vth Gate-to-Source Charge ––– 11 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.6 ––– Qgd Gate-to-Drain Charge ––– 16 ––– Qgodr Gate Charge Overdrive ––– 27.4 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 19.6 ––– Qoss Output Charge ––– 17 ––– nC RG Gate Resistance ––– 0.6 ––– td(on) Turn-On Delay Time ––– 11 ––– tr Rise Time ––– 23 ––– td(off) Turn-Off Delay Time ––– 22 ––– tf Fall Time ––– 18 ––– Ciss Input Capacitance ––– 3240 ––– Coss Output Capacitance ––– 300 ––– Crss Reverse Transfer Capacitance ––– 140 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 27 41 ns Qrr Reverse Recovery Charge ––– 140 210 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VDS = 50V ––– VGS = 20V VGS = -20V ––– ––– 240 ––– ––– 50 i Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 35A e Conditions Max. 110 35 ƒ = 1.0MHz TJ = 25°C, IF = 35A, VDD = 50V di/dt = 500A/μs eà TJ = 25°C, IS = 35A, VGS = 0V e showing the integral reverse p-n junction diode. Typ. ––– RG=1.8 VDS = 25V, ID = 35A ID = 35A ID = 35A VGS = 0V VDS = 25V VDS = 16V, VGS = 0V VDD = 50V, VGS = 10V VDS = VGS, ID = 100μA μA VGS = 10V VDS = 100V, VGS = 0V, TJ = 125°C VDS = 100V, VGS = 0V Thermal Resistance Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case f ––– 1.2 RJC (Top) Junction-to-Case f ––– 32 °C/W RJA Junction-to-Ambient fg ––– 35 RJA (<10s) Junction-to-Ambient g ––– 22 |
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