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IRFH8202TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH8202TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  2 www.irf.com © 2013International Rectifier August 02, 2013 IRFH8202TRPbF S D G Thermal Resistance Parameter Typ. Max. Units RθJC(Bottom) Junction-to-Case f 0.5 0.8 RθJC (Top) Junction-to-Case f ––– 15 °C/W RθJA Junction-to-Ambient g ––– 35 RθJA (<10s) Junction-to-Ambient g ––– 21 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.90 1.05 ––– 1.40 1.85 VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V VDS = VGS, ID = 150μA ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 5.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 181 ––– ––– S Qg Total Gate Charge ––– 110 ––– nC Qg Total Gate Charge ––– 52 78 Qgs1 Pre-Vth Gate-to-Source Charge ––– 13 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 7.8 ––– Qgd Gate-to-Drain Charge ––– 17 ––– Qgodr Gate Charge Overdrive ––– 15 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 25 ––– Qoss Output Charge ––– 36 ––– nC RG Gate Resistance ––– 1.3 2.6 Ω td(on) Turn-On Delay Time ––– 28 ––– tr Rise Time ––– 46 ––– td(off) Turn-Off Delay Time ––– 30 ––– tf Fall Time ––– 19 ––– Ciss Input Capacitance ––– 7174 ––– Coss Output Capacitance ––– 1758 ––– Crss Reverse Transfer Capacitance ––– 828 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 37 56 ns Qrr Reverse Recovery Charge ––– 68 102 nC ––– VDS = 16V, VGS = 0V MOSFET symbol nA VGS = 10V, VDS = 13V, ID = 50A VGS = 20V VGS = -20V 100 h ID = 50A VGS = 4.5V ns A pF nC ––– ––– 400 ––– ––– Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 50A e VDS = 20V, VGS = 0V VGS = 4.5V, ID = 50A e VDS = 13V Conditions Max. 468 50 ƒ = 1.0MHz VGS = 0V VDS = 13V TJ = 25°C, IF = 50A, VDD = 13V di/dt = 200A/μs eà TJ = 25°C, IS = 50A, VGS = 0V e showing the integral reverse p-n junction diode. Typ. ––– RG=1.8 Ω VDS = 13V, ID = 50A VDS = 20V, VGS = 0V, TJ = 125°C m Ω μA ID = 50A VDD = 13V, VGS = 4.5V |
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