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IRFH8337TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH8337TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFH8337PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 17, 2014 D S G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 4.7 RθJC (Top) Junction-to-Case f ––– 40 °C/W RθJA Junction-to-Ambient g ––– 39 RθJA (<10s) Junction-to-Ambient g ––– 26 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 10.3 12.8 ––– 15.8 19.9 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 25µA ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 31 ––– ––– S Qg Total Gate Charge ––– 10 ––– nC Qg Total Gate Charge ––– 4.7 ––– Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.7 ––– Qgd Gate-to-Drain Charge ––– 1.4 ––– Qgodr Gate Charge Overdrive ––– 1.0 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 2.1 ––– Qoss Output Charge ––– 4.2 ––– nC RG Gate Resistance ––– 1.6 ––– Ω td(on) Turn-On Delay Time ––– 6.4 ––– tr Rise Time ––– 12 ––– td(off) Turn-Off Delay Time ––– 5.7 ––– tf Fall Time ––– 4.1 ––– Ciss Input Capacitance ––– 790 ––– Coss Output Capacitance ––– 180 ––– Crss Reverse Transfer Capacitance ––– 69 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 17 26 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VDS = 15V ––– VGS = 20V VGS = -20V ––– ––– 65 ––– ––– 16.2 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 16.2A e VDS = 24V, VGS = 0V VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V VGS = 10V, VDS = 15V, ID = 16.2A VGS = 0V VDS = 10V Conditions Max. 28 16.2 ƒ = 1.0MHz TJ = 25°C, IF = 16.2A, VDD = 15V di/dt = 390 A/µs eà TJ = 25°C, IS = 16.2A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 13A e VGS = 4.5V Typ. ––– RG=1.8Ω VDS = 10V, ID = 16.2A VDS = 24V, VGS = 0V, TJ = 125°C m Ω ID = 16.2A ID = 16.2A |
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