IRFHM8235PbF

4

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© 2013 International Rectifier

August 21, 2013

Fig 8. Maximum Safe Operating Area

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10.

Threshold Voltage Vs. Temperature

0.0

0.5

1.0

1.5

2.0

2.5

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 150°C

VGS = 0V

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.8

1.2

1.6

2.0

2.4

2.8

ID = 25µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

Tc = 25°C

Tj = 150°C

Single Pulse

10msec

1msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

DC

Limited by source

bonding technology

25

50

75

100

125

150

TC , Case Temperature (°C)

0

11

22

33

44

55

Limited by source

bonding technology