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2N7614M1 Datasheet(PDF) 3 Page - International Rectifier |
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2N7614M1 Datasheet(HTML) 3 Page - International Rectifier |
3 / 9 page www.irf.com 3 Pre-Irradiation IRHLG77214, 2N7614M1 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil- ity. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die) Parameter Up to 300K Rads (Si)1 Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 250 — V VGS = 0V, ID = 250µA VGS(th) Gate Threshold Voltage 1.0 2.0 VGS = VDS, ID = 250µA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 10V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -10V IDSS Zero Gate Voltage Drain Current — 10 µA VDS= 200V, VGS=0V RDS(on) Static Drain-to-Source On-State Resistance (TO-39) — ?? Ω VGS = 4.5V, ID = 0.5A RDS(on) Static Drain-to-Source On-state VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 0.8A Resistance (MO-036AB) — 1.1 Ω VGS = 4.5V, ID = 0.5A 1. Part numbers IRHLG77214, IRHLG73214 Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V -2V -4V -5V -6V -7V 38 ± 5% 300 ± 7.5% 38 ± 7.5% 250 250 250 250 250 250 62 ± 5% 355 ± 7.5% 33 ± 7.5% 250 250 250 250 250 - 85 ± 5% 380 ± 7.5% 29 ± 7.5% 250 250 250 250 - - 0 50 100 150 200 250 300 -7 -6 -5 -4 -3 -2 -1 0 Bias VGS (Volts) LET=38 ± 5% LET=62 ± 5% LET=85 ± 5% |
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