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3

Pre-Irradiation

IRHLG77214, 2N7614M1

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-

ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Fig a. Typical Single Event Effect, Safe Operating Area

Parameter

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

250

—

V

Gate Threshold Voltage

1.0

2.0

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

10

µA

Static Drain-to-Source

„

On-State Resistance (TO-39)

—

??

Ω

Static Drain-to-Source On-state

„

Diode Forward Voltage

„

—

1.2

V

Resistance (MO-036AB)

—

1.1

Ω

1. Part numbers IRHLG77214, IRHLG73214

Table 2. Typical Single Event Effect Safe Operating Area

LET

Energy

Range

VDS (V)

(MeV)

(µm)

@VGS=

@VGS=

@VGS=

@VGS=

@VGS=

@VGS=

0V

-2V

-4V

-5V

-6V

-7V

38 ± 5%

300 ± 7.5%

38 ± 7.5%

250

250

250

250

250

250

62 ± 5%

355 ± 7.5%

33 ± 7.5%

250

250

250

250

250

-

85 ± 5%

380 ± 7.5%

29 ± 7.5%

250

250

250

250

-

-

0

50

100

150

200

250

300

-7

-6

-5

-4

-3

-2

-1

0

Bias VGS (Volts)

LET=38 ± 5%

LET=62 ± 5%

LET=85 ± 5%