Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

IRHMK53160 Datasheet(PDF) 2 Page - International Rectifier

Part # IRHMK53160
Description  RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHMK53160 Datasheet(HTML) 2 Page - International Rectifier

  IRHMK53160 Datasheet HTML 1Page - International Rectifier IRHMK53160 Datasheet HTML 2Page - International Rectifier IRHMK53160 Datasheet HTML 3Page - International Rectifier IRHMK53160 Datasheet HTML 4Page - International Rectifier IRHMK53160 Datasheet HTML 5Page - International Rectifier IRHMK53160 Datasheet HTML 6Page - International Rectifier IRHMK53160 Datasheet HTML 7Page - International Rectifier IRHMK53160 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
IRHMK57160
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
45*
ISM
Pulse Source Current (Body Diode)
À
180
VSD Diode Forward Voltage
1.2
V
Tj = 25°C, IS = 45A, VGS = 0V Ã
trr
Reverse Recovery Time
270
ns
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
2.7
µCVDD ≤ 50V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
0.60
RthCS
Case-to-Sink
— 0.21
°C/W
RthJA
Junction-to-Ambient
48
Typical socket mount
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.11
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.013
VGS = 12V, ID = 45A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
42
S ( )
VDS = 15V, IDS = 45A Ã
IDSS
Zero Gate Voltage Drain Current
10
VDS = 80V ,VGS = 0V
——
25
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
160
VGS =12V, ID = 45A
Qgs
Gate-to-Source Charge
55
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
65
td(on)
Turn-On Delay Time
35
VDD = 50V, ID = 45A
tr
Rise Time
125
VGS =12V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
75
tf
Fall Time
50
LS + LD
Total Inductance
6.8
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
6270
VGS = 0V, VDS = 25V
Coss
Output Capacitance
1620
pF
f = 100KHz
Crss
Reverse Transfer Capacitance
35
Rg
Internal Gate Resistance
1.0
f = 1.0MHz, open drain
nA
Ã
nH
ns
µA
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.


Similar Part No. - IRHMK53160

ManufacturerPart #DatasheetDescription
logo
International Rectifier
IRHMK57160 IRF-IRHMK57160 Datasheet
180Kb / 8P
   Simple Drive Requirements
IRHMK57160 IRF-IRHMK57160_15 Datasheet
180Kb / 8P
   Simple Drive Requirements
IRHMK57260SE IRF-IRHMK57260SE Datasheet
188Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA)
IRHMK57260SE IRF-IRHMK57260SE Datasheet
193Kb / 8P
   Simple Drive Requirements
IRHMK57260SE IRF-IRHMK57260SE_15 Datasheet
193Kb / 8P
   Simple Drive Requirements
More results

Similar Description - IRHMK53160

ManufacturerPart #DatasheetDescription
logo
International Rectifier
JANSF2N7422U IRF-JANSF2N7422U Datasheet
132Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHNJ597034 IRF-IRHNJ597034 Datasheet
152Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHNJ67434 IRF-IRHNJ67434 Datasheet
193Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE-MOUNT
IRHNJ57230 IRF-IRHNJ57230 Datasheet
127Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ57130 IRF-IRHNJ57130 Datasheet
130Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNM57110 IRF-IRHNM57110 Datasheet
226Kb / 10P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)
IRHNA67260 IRF-IRHNA67260 Datasheet
141Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
IRHLUC7670Z4 IRF-IRHLUC7670Z4 Datasheet
309Kb / 16P
   RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
IRHLUC7970Z4 IRF-IRHLUC7970Z4 Datasheet
215Kb / 9P
   RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
IRHNA597260 IRF-IRHNA597260 Datasheet
119Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com