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IRHMK53160 Datasheet(PDF) 2 Page - International Rectifier |
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IRHMK53160 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHMK57160 Pre-Irradiation 2 www.irf.com Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 45* ISM Pulse Source Current (Body Diode) À — — 180 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 45A, VGS = 0V Ã trr Reverse Recovery Time — — 270 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 2.7 µCVDD ≤ 50V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.60 RthCS Case-to-Sink — 0.21 — °C/W RthJA Junction-to-Ambient — — 48 Typical socket mount Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.013 Ω VGS = 12V, ID = 45A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 42 — — S ( ) VDS = 15V, IDS = 45A Ã IDSS Zero Gate Voltage Drain Current — — 10 VDS = 80V ,VGS = 0V —— 25 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 160 VGS =12V, ID = 45A Qgs Gate-to-Source Charge — — 55 nC VDS = 50V Qgd Gate-to-Drain (‘Miller’) Charge — — 65 td(on) Turn-On Delay Time — — 35 VDD = 50V, ID = 45A tr Rise Time — — 125 VGS =12V, RG = 2.35Ω td(off) Turn-Off Delay Time — — 75 tf Fall Time — — 50 LS + LD Total Inductance — 6.8 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 6270 — VGS = 0V, VDS = 25V Coss Output Capacitance — 1620 — pF f = 100KHz Crss Reverse Transfer Capacitance — 35 — Rg Internal Gate Resistance — 1.0 — Ω f = 1.0MHz, open drain nA Ã nH ns µA Note: Corresponding Spice and Saber models are available on International Rectifier Web site. |
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