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BYW29E Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYW29E Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1;3 Semiconductors Product specification Rectifier diodes BYW29E series ultrafast, rugged Fig.1. Definition of t rr1, Qs and Irrm Fig.2. Definition of V fr Fig.3. Circuit schematic for t rr2 Fig.4. Definition of t rr2 Fig.5. Maximum forward dissipation P F = f(IF(AV)); square current waveform where I F(AV) =IF(RMS) x √D. Fig.6. Maximum forward dissipation P F = f(IF(AV)); sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr I = 1A R rec I = 0.25A 0A trr2 0.5A IF IR time time V F V fr V F I F 0 2468 10 12 0 2 4 6 8 10 12 D = 1.0 0.5 0.2 0.1 BYW29 IF(AV) / A PF / W D = tp tp T T t I Tmb(max) / C 150 143 136 129 122 115 108 Vo = 0.791 V Rs = 0.013 Ohms shunt Current to ’scope D.U.T. Voltage Pulse Source R 01 23 456 78 0 1 2 3 4 5 6 7 8 a = 1.57 1.9 2.2 2.8 4 BYW29 IF(AV) / A PF / W Tmb(max) / C 150 146.5 143 139.5 136 132.5 129 125.5 122 Vo = 0.791 V Rs = 0.013 Ohms August 2001 3 Rev 1.400 |
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