PDTC144ET-215 datasheet(7/17 Pages) PHILIPS

Part #	PDTC144ET-215

Description	NPN resistor-equipped transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

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PDTC144E_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 9 — 15 November 2011

7 of 17

NXP Semiconductors

PDTC144E series

NPN resistor-equipped transistors; R1 = 47 k

, R2 = 47 k

7.

Characteristics

[1]

Characteristics of built-in transistor

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

-

100

nA

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

-

1

A

VCE =30V; IB =0A;

Tj = 150 C

--

5

A

IEBO

emitter-base cut-off

current

VEB =5V; IC =0A

-

90

A

hFE

DC current gain

VCE =5V; IC =5mA

80

-

VCEsat

collector-emitter

saturation voltage

IC =10mA; IB =0.5 mA

-

150

mV

VI(off)

off-state input voltage

VCE =5V; IC =100 A-

1.2

0.8

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC =2mA

3

1.6

-

V

R1

bias resistor 1 (input)

33

47

61

k



R2/R1

bias resistor ratio

0.8

1

1.2

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f= 1MHz

--

2.5

pF

fT

transition frequency

VCE =5V; IC =10 mA;

f = 100 MHz

[1]

-230

-MHz

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