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V23990-P760-A-D3-14 Datasheet(PDF) 5 Page - Vincotech |
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V23990-P760-A-D3-14 Datasheet(HTML) 5 Page - Vincotech |
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5 / 24 page  V23990-P760-A-PM Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Conditions Characteristic Values Value Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,84 2,3 Tj=150°C 2,27 Tj=25°C 0,25 Tj=150°C Tj=25°C 700 Tj=150°C 4 Tj=25°C 117 Tj=150°C 121 Tj=25°C 18 Tj=150°C 24 Tj=25°C 249 Tj=150°C 316 Tj=25°C 88 Tj=150°C 125 Tj=25°C 2,39 Tj=150°C 3,43 Tj=25°C 2,96 Tj=150°C 4,8 Thermal resistance chip to heatsink per chip RthJH 0,6 Thermal resistance chip to case per chip RthJC 0,39 Tj=25°C 1,1 1,84 2,1 Tj=150°C 1,8 Thermal resistance chip to heatsink per chip RthJH 1,81 K/W Thermal resistance chip to case per chip RthJC 1,20 K/W Tj=25°C 1,87 2,2 Tj=150°C 1,83 Tj=25°C 10 Tj=150°C Tj=25°C 54,29 Tj=150°C 78,18 Tj=25°C 158,7 Tj=150°C 295,4 Tj=25°C 3,21 Tj=150°C 6,6 di(rec)max Tj=25°C 4114 /dt Tj=150°C 3412 Tj=25°C 3,21 Tj=150°C 6,6 Thermal resistance chip to heatsink per chip RthJH 1,27 Thermal resistance chip to case per chip RthJC 0,84 20,9 22 23,1 160 Tj=25°C Tj=25°C Tc=100°C Tj=25°C 960 Tj=25°C Tj=25°C 600 600 25 10 50 50 ±15 600 25 f=1MHz 0 Thermal grease thickness≤50µm λ = 0,61 W/m·K Thermistor Reverse recovery energy VF Brake FWD Diode forward voltage Reverse leakage current Ir trr Qrr Erec ±15 Thermal grease thickness≤50µm λ = 0,61 W/m·K Thermal grease thickness≤50µm λ = 0,61 W/m·K IRRM ±15 mWs ns mA nA V V 1200 ±15 20 205 Brake IGBT Rgon=8 Rgoff=8 VGE(th) Collector-emitter saturation voltage VCE(sat) Turn-on delay time VCE=VGE Rated resistance R25 k Deviation of R100 DR/R R100=1486.1 Tol. ±3% Tol. ±5% %/K B-value B(25/100) K Power dissipation given Epcos-Typ P mW 0 15 mWs µC V µA ns A/µs A Rgint td(on) Integrated Gate resistor ICES IGES Collector-emitter cut-off incl diode Gate-emitter leakage current Gate emitter threshold voltage V 290 K/W nC Reverse recovery time Peak rate of fall of recovery current Peak reverse recovery current Reverse recovered charge Rgon=8 0 Diode forward voltage VF Reverse transfer capacitance QGate Brake Inverse Diode Gate charge Coss Turn-on energy loss per pulse Rise time Turn-off delay time td(off) tf Eon Fall time Turn-off energy loss per pulse Input capacitance Output capacitance Crss Cies Eoff tr 50 0,0017 50 2,9 2770 210 4000 K/W pF copyright Vincotech 5 Revision: 3 |
Similar Part No. - V23990-P760-A-D3-14 |
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Similar Description - V23990-P760-A-D3-14 |
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