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TC7W241FU Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC7W241FU
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7W241FU
2009-09-30
3
Electrical Characteristics
DC Electrical Characteristics
Ta
= 25°C
Ta
= −40
to 85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
2.0
1.5
1.5
4.5
3.15
3.15
High level
VIH
6.0
4.2
4.2
2.0
0.5
0.5
4.5
1.35
1.35
Input voltage
Low level
VIL
6.0
1.8
1.8
V
2.0
1.9
2.0
1.9
4.5
4.4
4.5
4.4
IOH = −20 μA
6.0
5.9
6.0
5.9
IOH = −6 mA
4.5
4.18
4.31
4.13
High level
VOH
VIN =
VIH or VIL
IOH = −7.8 mA
6.0
5.68
5.80
5.63
2.0
0
0.1
0.1
4.5
0
0.1
0.1
IOL = 20 μA
6.0
0
0.1
0.1
IOL = 6 mA
4.5
0.17
0.26
0.33
Output
voltage
Low level
VOL
VIN =
VIH or VIL
IOL = 7.8 mA
6.0
0.18
0.26
0.33
V
3-state output off-state
current
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
6.0
±0.5
±5.0
μA
Input leakage current
IIN
VIN = VCC or GND
6.0
±0.1
±1.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
6.0
2.0
20.0
μA




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