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CAT25C16SA-1.8TE13 Datasheet(PDF) 7 Page - Catalyst Semiconductor |
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CAT25C16SA-1.8TE13 Datasheet(HTML) 7 Page - Catalyst Semiconductor |
7 / 10 page 7 CAT25C01/02/04/08/16 Doc. No. 25067-00 5/00 Advanced Information Figure 4. Read Instruction Timing Byte Write Once the device is in a Write Enable state, the user may proceed with a write sequence by setting the CS low, issuing a write instruction via the SI line, followed by the 16-bit address for 25C08/16. (only 10-bit addresses are used for 25C08, 11-bit addresses are used for 25C16. The rest of the bits are don't care bits) and 8-bit address for 25C01/02/04 (for the 25C04, bit 3 of the read data instruction contains address A8). Programming will start after the CS is brought high. Figure 6 illustrates byte write sequence. WRITE Sequence The CAT25C01/02/04/08/16 powers up in a Write Dis- able state. Prior to any write instructions, the WREN instruction must be sent to CAT25C01/02/04/08/16. The device goes into Write enable state by pulling the CS low and then clocking the WREN instruction into CAT25C01/02/04/08/16. The CS must be brought high after the WREN instruction to enable writes to the device. If the write operation is initiated immediately after the WREN instruction without CS being brought high, the data will not be written to the array because the write enable latch will not have been properly set. Also, for a successful write operation the address of the memory location(s) to be programmed must be outside the protected address field location selected by the block protection level. Figure 5. RDSR Instruction Timing Note: Dashed Line= mode (1, 1) – –––– Note: Dashed Line= mode (1, 1) – – – – SK SI SO 0000001 1 BYTE ADDRESS* 0123456789 10 20 21 22 23 24 25 26 27 28 29 30 7 6 5 4 3 2 1 0 *Please check the instruction set table for address CS OPCODE DATA OUT MSB HIGH IMPEDANCE 0 1 2 345 67 8 10 911 12 13 14 SCK SI DATA OUT MSB HIGH IMPEDANCE OPCODE SO 7 6 5 4 3 2 1 0 CS 00 0 00 1 0 1 |
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