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SI2318CDS-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI2318CDS-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 Vishay Siliconix Si2318CDS New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.02 0.04 0.06 0.08 0.10 246 8 10 TJ = 25 °C TJ = 125 °C ID =4.3 A V GS - Gate-to-Source Voltage (V) 0 8 16 24 32 0.001 0.01 0.1 1 10 100 Time (s) Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s,10s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
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