Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

NX8350T33 Datasheet(PDF) 7 Page - California Eastern Labs

Part # NX8350T33
Description  LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NX8350T33 Datasheet(HTML) 7 Page - California Eastern Labs

  NX8350T33 Datasheet HTML 1Page - California Eastern Labs NX8350T33 Datasheet HTML 2Page - California Eastern Labs NX8350T33 Datasheet HTML 3Page - California Eastern Labs NX8350T33 Datasheet HTML 4Page - California Eastern Labs NX8350T33 Datasheet HTML 5Page - California Eastern Labs NX8350T33 Datasheet HTML 6Page - California Eastern Labs NX8350T33 Datasheet HTML 7Page - California Eastern Labs NX8350T33 Datasheet HTML 8Page - California Eastern Labs  
Zoom Inzoom in Zoom Outzoom out
 7 / 8 page
background image
NX8350TS
Chapter Title
R08DS0025EJ0100 Rev.1.00
Page 7 of 7
Sep 19, 2010
SAFETY INFORMATION ON THIS PRODUCT
Warning
Laser Beam
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
Caution
Optical Fiber
A glass-fiber is attached on the product. Handle with care.
• When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part
or fragments.


Similar Part No. - NX8350T33

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
NX8350TS RENESAS-NX8350TS Datasheet
227Kb / 9P
   LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350TS RENESAS-NX8350TS_15 Datasheet
220Kb / 9P
   LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
More results

Similar Description - NX8350T33

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
NX8350TS RENESAS-NX8350TS Datasheet
227Kb / 9P
   LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
logo
California Eastern Labs
NX8349TS CEL-NX8349TS Datasheet
333Kb / 10P
   LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
logo
Renesas Technology Corp
NX8350TS RENESAS-NX8350TS_15 Datasheet
220Kb / 9P
   LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
logo
California Eastern Labs
NX6350EP CEL-NX6350EP Datasheet
1,013Kb / 6P
   LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
logo
Renesas Technology Corp
NX8346TS RENESAS-NX8346TS Datasheet
172Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8369TB RENESAS-NX8369TB Datasheet
213Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
California Eastern Labs
NX8369TB CEL-NX8369TB Datasheet
214Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
Renesas Technology Corp
NX8349TB RENESAS-NX8349TB_15 Datasheet
204Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349YK RENESAS-NX8349YK_15 Datasheet
253Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TB RENESAS-NX8349TB Datasheet
211Kb / 9P
   LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com