NX7561JB-BC datasheet(1/4 Pages) CEL

Part #	NX7561JB-BC

Description	NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE

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Manufacturer	CEL [California Eastern Labs]

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NEC's 1550 nm InGaAsP MQW FP

PULSED LASER DIODE IN DIP PACKAGE

FOR OTDR APPLICATION (135 mW MIN)

NX7561JB-BC

FEATURES

• HIGH OUTPUT POWER:

Pf = 135 mW MIN at IFP = 1000 mA,

Pulse width (PW) = 10ms, Duty = 1%

• LONG WAVELENGTH:

λC = 1550 nm

• INTERNAL THERMOELECTRIC COOLER

• HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE

• SINGLE MODE FIBER PIGTAIL

NEC's NX7561JB-BC is a 1550 nm developed strained Mul-

tiple Quantum Well (st-MQW) structure pulsed laser diode DIP

module with single mode fiber and internal thermoelectric

cooler. It is designed for light sources of optical measurement

equipment (OTDR).

DESCRIPTION

PART NUMBER

NX7561JB-BC

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

VFP

Forward Voltage, CW, IF = 30 mA

V

2.5

4.0

ITH

Threshold Current, CW

mA

40

70

Pf

Optical Output Power from Fiber IFP = 1000 mA1

mW

135

IFP = 600 mA1

mW

70

IFP = 400 mA1

mW

20

λC

Center Wavelength, RMS, IFP = 400, 600, 1000 mA1

nm

1530

1550

1570

σ

Spectral Width, RMS, IFP = 400, 600, 1000 mA1

nm

6.0

10.0

tr

Rise Time, 10-90%

ns

1.0

2.0

tf

Fall Time, 90-10%

ns

1.4

2.0

Note:

1. PW = 10 µs, Duty = 1%

ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)

PART NUMBER

NX7561JB-BC

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

R1

Thermistor Resistance, TLD = 25°CkΩ

9.5

10.0

10.5

B

B Constant

K

3350

3450

3550

IC

Cooler Current, ∆T = 40 K

A

0.6

0.8

VC

Cooler Voltage, ∆T = 40 K

V

1.1

1.5

∆T1

Cooling Capacity, IC = 0.8 A

K

40

ELECTRO-OPTICAL CHARACTERISTICS

APPLICABLE TO THERMISTOR AND TEC: (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)

California Eastern Laboratories

Note:

1. ∆T = | TC - TLD |.

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NX7561JB-BC Datasheet(PDF) 1 Page - California Eastern Labs

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