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BD2270HFV-LB Datasheet(PDF) 1 Page - Rohm |
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BD2270HFV-LB Datasheet(HTML) 1 Page - Rohm |
1 / 21 page Datasheet ○Product structure:Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays 1/18 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Controller ICs for High Side NMOSFET BD2270HFV-LB General Description This is the product guarantees long time support in Industrial market. BD2270HFV is an IC with a built-in external N-channel MOSFET driver circuit. This IC has a built-in charge pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel MOSFET drive without using any external parts. In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up sequence. The space saving type of HVSOF5 package is used. Features ■ Long time support a product for Industrial applications. ■ Built-in charge pump ■ Built-in discharge circuit for output charge ■ Soft start circuit ■ Built-in comparator with hysteresis function at control input terminal ■ Possible to drive N-channel power MOSFET Applications Industrial Equipment, PCs, PC peripheral devices, digital consumer electronics, etc. Key Specifications Input voltage range: 2.7V to 5.5V GATE rise time (CGATE=500pF) : 130 μs (Typ.) GATE output voltage(VCC=5V): 13.5V(Typ.) Operating current: 50 μA(Typ.) Standby current: 5 μA (Typ.) Operating temperature range: -25℃ to +85℃ Package W(Typ.) D(Typ.) H (Max.) HVSOF5 1.60mm x 1.60mm x 0.60mm Typical Application Circuit Lineup GATE output voltage(VCC=5V) Package Orderable Part Number Min. Typ. Max. 10V 13.5V 15V HVSOF5 Reel of 3000 BD2270HFV – LBTR HVSOF5 VCC DISC GND GATE AEN BD2270HFV 3.3V 3.3V Load ON/OFF VIN_SWITCH VOUT_SWITCH |
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