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Datasheet

Datasheet

BD9673AEFJ

TSZ02201-0Q1Q0AJ00190-1-2

© 2013 ROHM Co., Ltd. All rights reserved.

28.JAN.2014 Rev.003

www.rohm.com

TSZ22111・15・001

●Absolute Maximum Ratings

Item

Symbol

Ratings

Unit

VCC-GND Supply Voltage

VCC

45

V

BST-GND Voltage

VBST

50

V

BST-Lx Voltage

⊿VBST

7

V

EN-GND Voltage

VEN

45

V

Lx-GND Voltage

VLX

45

V

FB-GND Voltage

VFB

7

V

VC-GND Voltage

VC

7

V

SYNC-GND Voltage

SYNC

7

V

High-side FET Drain Current

IDH

3.5

A

Power Dissipation

Pd

3.76

(*1)

W

Operating Temperature

Topr

-40～+105

℃

Storage Temperature

Tstg

-55～+150

℃

Junction Temperature

Tjmax

+150

℃

(*1)During mounting of 70×70×1.6t mm 4layer board (Copper area: 70mm×70mm).Reduce by 30.08mW for every 1℃ increase. (Above 25℃)

●Electrical Characteristics (Unless otherwise specified Ta=25℃, VCC=24V, Vo=5V,EN=3V )

Parameter

Symbol

Limits

Unit

Conditions

Min.

Typ.

Max.

【Circuit Current】

Stand-by current of VCC

Ist

－

0

10

µA

VEN=0V

Circuit current of VCC

Icc

－

1

2

mA

FB=1.2V

【Under Voltage Lock Out (UVLO)】

Detect Voltage

Vuv

6.1

6.4

6.7

V

Hysteresis width

Vuvhy

－

200

300

mV

【Oscillator】

Oscillating frequency

fosc

270

300

330

kHz

Max Duty Cycle

Dmax

85

91

97

%

【Error Amp】

FB threshold voltage

VFB

0.990

1.000

1.010

V

Input bias current

IFB

-1.0

0

1.0

µA

VFB=0V

Error amplifier DC gain

700

7000

70000

V/V

Trans Conductance

110

220

440

µA/V

IVC=±10µA,

VC=1.5V

Soft Start Time

Tsoft

7

10

13

ms

【Current Sense Amp】

VC to switch current transconductance

5

10

20

A/V

【Output】

Lx NMOS ON resistance

RonH

－

200

340

m

Ω

Lx pre-charge NMOS ON resistance

RonL

－

10

17

Ω