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AN822 Datasheet(PDF) 4 Page - Vishay Siliconix |
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AN822 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 69920 S11-2187-Rev. C, 07-Nov-11 Vishay Siliconix Si7905DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.05 0.10 0.15 0.20 02 4 6 8 10 VGS -Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID =5A 0 10 20 30 40 50 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs 1ms 10 ms 100 ms 1s 10 s DC Limited byRDS(on)* |
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Similar Description - AN822 |
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