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G12180-010A Datasheet(PDF) 3 Page - Hamamatsu Corporation |
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G12180-010A Datasheet(HTML) 3 Page - Hamamatsu Corporation |
3 / 4 page InGaAs PIN photodiodes G12180 series 3 Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature Element temperature (°C) (Typ. VR=10 mV) 1 G Ω -40 -20 0 40 60 80 100 100 M Ω 1 M Ω 1 k Ω 10 k Ω 100 k Ω 10 M Ω 10 G Ω 100 G Ω 20 G12180-003A G12180-005A G12180-010A G12180-020A G12180-030A G12180-050A 1 nF 0.01 0.1 1 10 100 Reverse voltage (V) 100 pF 1 pF 10 pF 10 nF (Typ. Ta=25 °C, f=1 MHz) G12180-003A G12180-005A G12180-010A G12180-020A G12180-030A G12180-050A KIRDB0544EA KIRDB0543EA Dimensional outlines (unit: mm) (1) G12180-003A/-005A/-010A Window 2.2 min. 4.7 ± 0.1 5.4 ± 0.2 0.45 Lead Case 2.5 ± 0.2 Photosensitive surface KIRDA0150EC Dark current vs. reverse voltage 0.01 0.1 1 10 100 Reverse voltage (V) 10 nA 100 pA 10 pA 1 nA 100 nA (Typ. Ta=25 °C) G12180-003A G12180-005A G12180-010A G12180-020A G12180-030A G12180-050A KIRDB0542EA |
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