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MX25L6473EMI10G Datasheet(PDF) 4 Page - Macronix International

Part # MX25L6473EMI10G
Description  64M-BIT [x 1/x 2/x 4] CMOS MXSMIO짰 (SERIAL MULTI I/O) FLASH MEMORY
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Manufacturer  MCNIX [Macronix International]
Direct Link  http://www.macronix.com
Logo MCNIX - Macronix International

MX25L6473EMI10G Datasheet(HTML) 4 Page - Macronix International

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MX25L6473E
P/N: PM1907
REV. 1.1, NOV. 06, 2013
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY
1. FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/O
mode) structure
• 2048 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 256 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 128 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Permanent fixed QE bit, QE =1 and 4 I/O mode is enabled
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 86MHz with 4 dummy cycles for 2READ instruction
- 4 I/O: Up to 104MHz
- Configurable dummy cycle number for 4 I/O read operation
- Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)
- Byte program time: 12us (typical)
- Continuous Program mode (automatically increase address under word program mode)
- Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 20s(typ.) /
chip
• Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz
- Low active programming current: 15mA (typ.)
- Low active sector erase current: 10mA (typ.)
- Low standby current: 15uA (typ.)
- Deep power down current: 1uA (typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention


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