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MX25L6473EMI10G Datasheet(PDF) 4 Page - Macronix International |
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MX25L6473EMI10G Datasheet(HTML) 4 Page - Macronix International |
4 / 86 page 4 MX25L6473E P/N: PM1907 REV. 1.1, NOV. 06, 2013 64M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY 1. FEATURES GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/O mode) structure • 2048 Equal Sectors with 4K bytes each - Any Sector can be erased individually • 256 Equal Blocks with 32K bytes each - Any Block can be erased individually • 128 Equal Blocks with 64K bytes each - Any Block can be erased individually • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Latch-up protected to 100mA from -1V to Vcc +1V • Permanent fixed QE bit, QE =1 and 4 I/O mode is enabled PERFORMANCE • High Performance VCC = 2.7~3.6V - Normal read - 50MHz - Fast read - 1 I/O: 104MHz with 8 dummy cycles - 2 I/O: 86MHz with 4 dummy cycles for 2READ instruction - 4 I/O: Up to 104MHz - Configurable dummy cycle number for 4 I/O read operation - Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page) - Byte program time: 12us (typical) - Continuous Program mode (automatically increase address under word program mode) - Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 20s(typ.) / chip • Low Power Consumption - Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz - Low active programming current: 15mA (typ.) - Low active sector erase current: 10mA (typ.) - Low standby current: 15uA (typ.) - Deep power down current: 1uA (typ.) • Typical 100,000 erase/program cycles • 20 years data retention |
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