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MX25L12835EMI10G Datasheet(PDF) 4 Page - Macronix International |
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MX25L12835EMI10G Datasheet(HTML) 4 Page - Macronix International |
4 / 87 page 4 MX25L12835E P/N: PM1676 REV. 1.3, MAY 28, 2012 128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY 1. FEATURES GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • 134,217,728 x 1 bit structure or 67,108,864 x 2 bits (two I/O mode) structure or 33,554,432 x 4 bits (four I/O mode) structure • 4096 Equal Sectors with 4K bytes each - Any Sector can be erased individually • 512 Equal Blocks with 32K bytes each - Any Block can be erased individually • 256 Equal Blocks with 64K bytes each - Any Block can be erased individually • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Latch-up protected to 100mA from -1V to Vcc +1V PERFORMANCE • High Performance VCC = 2.7~3.6V - Normal read - 50MHz - Fast read - 1 I/O: 104MHz with 8 dummy cycles - 2 I/O: 70MHz with 4 dummy cycles for 2READ instruction; 70MHz with 8 dummy cycles for DREAD instruction - 4 I/O: 70MHz with 6 dummy cycles for 4READ instruction; 70MHz with 8 dummy cycles for QREAD instruction - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - Byte program time: 12us (typical) - 8/16/32/64 byte Wrap-Around Burst Read Mode - Continuously Program mode (automatically increase address under word program mode) - Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 80s(typ.) / chip • Low Power Consumption - Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz - Low active programming current: 25mA (max.) - Low active erase current: 25mA (max.) - Low standby current: 100uA (max.) - Deep power down current: 40uA (max.) • Minimum 100,000 erase/program cycles • 20 years data retention |
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