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2SD2454 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD2454 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2454 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Base-emitter breakdown voltage IE=400mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 0.9 1.5 V ICBO Collector cut-off current VCB=1700V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 66 200 µA hFE-1 DC current gain IC=1A ; VCE=5V 8 13 hFE-2 DC current gain IC=6A ; VCE=5V 5 8 VF Diode forward voltage IF=7A 1.5 2.0 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 250 pF fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz Switching times : inductive load ts Storage time 9 12 µs tf Fall time ICP=6A;IB1=1A fH =15.75kHz 0.3 0.7 µs |
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