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RV3C002UN Datasheet(PDF) 1 Page - Rohm |
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RV3C002UN Datasheet(HTML) 1 Page - Rohm |
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1 / 11 page  TENTATIVE Data Sheet www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. RV3C002UN Nch 20V 150mA Small Signal MOSFET 4) Built-in ESD Protection Diode. 2) Low voltage drive (1.2V) makes this device ideal for partable equipment. 3) Drive circuits can be simple. °C/W lThermal resistance Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - ambient RthJA *3 - - 1250 lInner circuit lFeatures lOutline VDSS 20V VML0604 RDS(on) (Max.) 2.0 W ID 150mA PD 100mW 1) Ultra Small Package (0.6×0.4×0.36mm) lPackaging specifications Type Packaging Taping lApplication Reel size (mm) 180 Switching Tape width (mm) 8 Basic ordering unit (pcs) 8,000 Drain - Source voltage VDSS 20 V Taping code T2CL Marking RY lAbsolute maximum ratings(T a = 25°C) Parameter Symbol Value Unit Continuous drain current ID *1 150 mA Pulsed drain current ID,pulse *2 600 mA Power dissipation Gate - Source voltage VGSS 10 V PD *3 100 mW Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C *1 BODY DIODE *2 ESD PROTECTION DIODE (1) Gate (2) Source (3) Drain 1/10 2014.03 - Rev.A |
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