HEF4011BT datasheet(4/12 Pages) NXP

Part #	HEF4011BT

Description	Inputs and outputs are protected against electrostatic effects

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HEF4011B

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Product data sheet

Rev. 5 — 21 November 2011

4 of 12

NXP Semiconductors

HEF4011B

Quad 2-input NAND gate

9.

Static characteristics

Table 6.

Static characteristics

VSS = 0 V; VI =VSS or VDD; unless otherwise specified.

Symbol Parameter

Conditions

VDD

Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 C Unit

Min

Max

Min

Max

Min

Max

Min

Max

VIH

HIGH-level

input voltage

I

O < 1 A

5 V

3.5

-

3.5

-

3.5

-

3.5

-

V

10 V

7.0

-7.0

-

7.0

-

V

15 V

11.0

-

11.0

-

11.0

-

11.0

-

V

VIL

LOW-level

input voltage

I

O < 1 A

5 V

-

1.5

-

1.5

-

1.5

-

1.5

V

10 V

-

3.0

-

3.0

-

3.0

-

3.0

V

15 V

-

4.0

-

4.0

-

4.0

-

4.0

V

VOH

HIGH-level

output voltage

I

O < 1 A

5 V

4.95

-

4.95

-

4.95

-

4.95

-

V

10 V

9.95

-

9.95

-

9.95

-

9.95

-

V

15 V

14.95

-

14.95

-

14.95

-

14.95

-

V

VOL

LOW-level

output voltage

I

O < 1 A

5 V

-

0.05

-

0.05

-

0.05

-

0.05

V

10 V

-

0.05

-

0.05

-

0.05

-

0.05

V

15 V

-

0.05

-

0.05

-

0.05

-

0.05

V

IOH

HIGH-level

output current

VO = 2.5 V

5 V

-

1.7

-

1.4

-

1.1

-

1.1

mA

VO = 4.6 V

5 V

-

0.64

-

0.5

-

0.36

-

0.36 mA

VO = 9.5 V

10 V

-

1.6

-

1.3

-

0.9

-

0.9

mA

VO = 13.5 V

15 V

-

4.2

-

3.4

-

2.4

-

2.4

mA

IOL

LOW-level

output current

VO = 0.4 V

5 V

0.64

-

0.5

-

0.36

-

0.36

-

mA

VO = 0.5 V

10 V

1.6

-

1.3

-

0.9

-

0.9

-

mA

VO = 1.5 V

15 V

4.2

-

3.4

-

2.4

-

2.4

-

mA

II

input leakage

current

15 V

-

0.1

-

0.1

-

1.0

-

1.0

A

IDD

supply current

all valid input

combinations;

IO =0A

5 V

-

0.25

-

0.25

-

7.5

-

7.5

A

10 V

-

0.5

-

0.5

-

15.0

-

15.0

A

15 V

-

1.0

-

1.0

-

30.0

-

30.0

A

CI

input

capacitance

---

7.5

--

-

pF

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