1

Features

– One 8K Word (16K Bytes) Boot Block with Programming Lockout

– Two 4K Word (8K Bytes) Parameter Blocks

– One 240K Word (480K Bytes) Main Memory Array Block

– 25 mA Active Current

– 50 µA CMOS Standby Current

Description

The AT49BV/LV4096A is a 3-volt, 4-megabit Flash memory organized as 524,288

words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s

advanced nonvolatile CMOS technology, the device offers access times to 70 ns with

power dissipation of just 67 mV at 2.7V read. When deselected, the CMOS standby

current is less than 50 µA.

The device contains a user-e na bled “boot block” prot ection fe ature. Th e

AT49BV/LV4096A locates the boot block at lowest order addresses (“bottom boot”).

To allow for simple in-system reprogrammability, the AT49BV/LV4096A does not

require high input voltages for programming. Reading data out of the device is similar

to reading from an EPROM; it has standard CE, OE and WE inputs to avoid bus con-

tention. Reprogramming the AT49BV/LV4096A is performed by first erasing a block of

data and then programming on a byte-by-byte or word-by-word basis.

Pin Configurations

Pin Name

Function

A0 - A17

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RESET

Reset

VPP

VPP can be left unconnected or connected to VCC, GND, 5V or

12V. The input has no effect on the operation of the device.

I/O0 - I/O15

Data Inputs/Outputs

I/O15(A-1)

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

BYTE

Selects Byte or Word Mode

NC

No Connect

4-megabit

(512K x 8/

256K x 16)

Single 2.7-volt

Flash Memory

AT49BV4096A

AT49LV4096A

Rev. 1618H–FLASH–4/04

Not Recommended

for New Design

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