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MAC245D Datasheet(PDF) 1 Page - Digitron Semiconductors |
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MAC245D Datasheet(HTML) 1 Page - Digitron Semiconductors |
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1 / 3 page  DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130213 SC245, SC246, (MAC245) SC245()3 SERIES THYRISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (TC = -40 to +100°C) SC245B, SC246B, S245B3, MAC245B SC245D, SC246D, S245D3, MAC245D SC245E, SC246E, S245E3, MAC245M SC245M, SC246M, S245M3, MAC245N VDRM 200 400 500 600 Volts Forward on-state current RMS IT(RMS) 10 Amps Peak forward surge current (one cycle, sine wave, 60Hz) ITSM 100 Amps Circuit fusing considerations (t = 1ms) (t = 8.3ms) I2t 20 41.5 A2s Peak gate power PGM 10 Watts Average gate power PG(AV) 0.5 Watts Operating junction temperature range TJ -40 to +100 °C Storage temperature range Tstg -40 to +125 °C Stud torque 30 In. lb. Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case R ӨJC 2.0 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit Peak off state current (2) (VD = rated VDRM, gate open) TC = 25°C TC = 115°C IDRM - - - - 0.1 0.5 mA Peak on-state voltage(2) (ITM = 14A peak, pulse width = 1ms, duty cycle ≤ 2%) VT - - 1.65 Volts Critical rate of rise of off-state voltage(2) (Rated VDRM, gate open, exponential waveform, TC = 100°C) dv/dt - 50 - V/µs Critical rate of rise of commutating off-state voltage (2) (IT(RMS) = Rated RMS on state current, VD = VDRM, gate open, commutating di/dt = 5.4A/ms, TC = 78.5°C) dv/dt(c) 4 - - V/µs Gate trigger current (3) (VD = 12V), trigger mode MT2(+), G(+),RL = 100Ω MT2(-), G(-), RL = 100Ω MT2(+), G(-), RL = 50Ω MT2(+), G(+), RL = 50Ω, TC = -40°C MT2(-), G(-), RL = 50Ω, TC = -40°C MT2(+), G(-), RL = 25Ω, TC = -40°C IGT - - - - - - - - - - - - 50 50 50 80 80 80 mA |
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