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RJH60T04DPQA1 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJH60T04DPQA1 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RJH60T04DPQ-A1 Preliminary R07DS1191EJ0200 Rev.2.00 Page 4 of 7 Apr 02, 2014 Gate to Emitter Voltage VGE (V) Transfer Characteristics (Typical) 0 468 10 14 12 Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Case Temparature Tc (°C) −25 025 75 125 50100 150 3.5 3.0 1.0 0.5 2.0 1.5 2.5 30 A 15 A IC = 60 A VGE = 15 V Pulse Test 10 8 6 4 2 0 Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) −25 025 75 125 50 100 150 VCE = 10 V Pulse Test Case Temparature Tc (°C) 1 mA IC = 10 mA 1 10 100 10000 1000 0 50 100 200 150250 300 Cies Coes Cres Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Ta = 25°C Collector to Emitter Voltage VCE (V) Gate Charge Qg ( μC) Dynamic Input Characteristics (Typical) 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 VGE VCE IC = 30 A Ta = 25°C VCC = 480 V 300 V 120 V VCC = 480 V 300 V 120 V 120 40 20 100 80 60 VCE = 10 V Pulse Test Ta = 150°C 25°C 0 20 40 60 80 100 00.5 1.01.5 2.02.5 3.0 VGE = 0 V Pulse Test C-E Diode Forward Voltage VCEF (V) Forward Current vs. Forward Voltage (Typical) Ta = 25°C 150°C |
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