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UF840G-TF3T-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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UF840G-TF3T-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 9 page UF840 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 9 www.unisonic.com.tw QW-R502-047.H ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C ~125°C) VDSS 500 V Drain to Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C) VDGR 500 V Gate to Source Voltage VGSS ±30 V Drain Current Continuous ID 8.0 A Pulsed IDM 32 A Power Dissipation (TC=25°C) TO-220 PD 134 W TO-220F/TO-220F1 TO-220F3 44 TO-220F2 46 TO-262/TO-263 134 Single Pulse Avalanche Energy EAS 510 mJ Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 0.93 °C/W TO-220F/TO-220F1 TO-220F3 2.86 TO-220F2 2.72 TO-262/TO-263 0.93 ELECTRICAL SPECIFICATIONS (TA =25°C, unless Otherwise Specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 500 V Gate Threshold Voltage VGS(TH) VGS=VDS, ID = 250μA 2 4 V On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS=10V 8 A Drain-Source Leakage Current IDSS VDS=Rated BVDSS, VGS = 0V 25 μA VDS=0.8xRated BVDSS,VGS=0V,TJ= 125°C 250 µA Gate-Source Leakage Current IGSS VGS = ±30V ±100 nA Static Drain-Source On-State Resistance (Note 1) RDS(ON) VGS=10V. ID = 4.4A 0.73 0.85 Ω Turn-On Delay Time tDLY(ON) VDD=30V, ID ≈ 1A, RG=9.1Ω, RL =30Ω (Note 2) 60 70 ns Turn-Off Delay Time tDLY(OFF) 260 300 ns Turn-On Rise Time tR 60 70 ns Turn-Off Fall Time tF 90 110 ns Total Gate Charge QG(TOT) VGS =10V, ID =8A,VDS=120V IG(REF) =3.3mA (Note 3) 116 120 nC Gate-Source Charge QGS 13 nC Gate-Drain Charge QGD 22 nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1.0MHz 750 pF Output Capacitance COSS 130 pF Reverse Transfer Capacitance CRSS 16 pF Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. |
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