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UF840G-TF3T-T Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UF840G-TF3T-T
Description  8A, 500V, 0.85廓, N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF840G-TF3T-T Datasheet(HTML) 3 Page - Unisonic Technologies

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UF840
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 9
www.unisonic.com.tw
QW-R502-047.H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ =25°C ~125°C)
VDSS
500
V
Drain to Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
8.0
A
Pulsed
IDM
32
A
Power Dissipation (TC=25°C)
TO-220
PD
134
W
TO-220F/TO-220F1
TO-220F3
44
TO-220F2
46
TO-262/TO-263
134
Single Pulse Avalanche Energy
EAS
510
mJ
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
TO-220
θJC
0.93
°C/W
TO-220F/TO-220F1
TO-220F3
2.86
TO-220F2
2.72
TO-262/TO-263
0.93
ELECTRICAL SPECIFICATIONS (TA =25°C, unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
500
V
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID = 250μA
2
4
V
On-State Drain Current (Note 1)
ID(ON)
VDS > ID(ON) x RDS(ON)MAX, VGS=10V
8
A
Drain-Source Leakage Current
IDSS
VDS=Rated BVDSS, VGS = 0V
25
μA
VDS=0.8xRated BVDSS,VGS=0V,TJ= 125°C
250
µA
Gate-Source Leakage Current
IGSS
VGS = ±30V
±100 nA
Static Drain-Source On-State
Resistance (Note 1)
RDS(ON) VGS=10V. ID = 4.4A
0.73 0.85
Turn-On Delay Time
tDLY(ON)
VDD=30V, ID ≈ 1A, RG=9.1Ω, RL =30Ω
(Note 2)
60
70
ns
Turn-Off Delay Time
tDLY(OFF)
260
300
ns
Turn-On Rise Time
tR
60
70
ns
Turn-Off Fall Time
tF
90
110
ns
Total Gate Charge
QG(TOT)
VGS =10V, ID =8A,VDS=120V
IG(REF) =3.3mA (Note 3)
116
120
nC
Gate-Source Charge
QGS
13
nC
Gate-Drain Charge
QGD
22
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1.0MHz
750
pF
Output Capacitance
COSS
130
pF
Reverse Transfer Capacitance
CRSS
16
pF
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.


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