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MCR218-8 Datasheet(PDF) 1 Page - Digitron Semiconductors |
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MCR218-8 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 3 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130115 MCR218 SERIES SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, gate open) MCR218-2 MCR218-3 MCR218-4 MCR218-6 MCR218-7 MCR218-8 MCR218-10 VDRM VRRM 50 100 200 400 500 600 800 V On-state RMS current (180° conduction angles, TC = 70°C) IT(RMS) 8.0 A Peak non-repetitive surge current (one half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM 100 A Circuit fusing consideration (t = 8.3ms) I2t 26 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 70°C) PGM 5 W Forward average gate power (t = 8.3ms, TC = 70°C) PG(AV) 0.5 W Forward peak gate current (pulse width ≤ 1.0µs, TC = 70°C) IGM 2.0 A Operating temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.0 °C/W Maximum lead temperature for soldering purposes 1/8” from case for 10s TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM - - - - 10 2.0 µA mA ON CHARACTERISTICS Peak on-state voltage* (ITM = 16A peak) VTM - 1.5 1.8 V Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT - 10 25 mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT - - 1.5 V Gate non-trigger voltage (Rated 12V, RL = 100Ω, TJ = 125°C) VGD 0.2 - - V Holding current (VD = 12V, initiating current = 200mA, gate open) IH - 16 30 mA DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt - 100 - V/µs * Pulse width ≤ 1.0ms, duty cycle ≤ 2%. |
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