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MCR65-8 Datasheet(PDF) 1 Page - Digitron Semiconductors |
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MCR65-8 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 3 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130128 MCR65 SERIES SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive forward and reverse voltage(1) (TJ = 25 to +125°C, gate open) MCR65-1 MCR65-2 MCR65-3 MCR65-4 MCR65-5 MCR65-6 MCR65-7 MCR65-8 MCR65-9 MCR65-10 VRRM, VDRM 25 50 100 200 300 400 500 600 700 800 Volts Non-repetitive peak reverse blocking voltage (t ≤ 5ms)(1) MCR65-1 MCR65-2 MCR65-3 MCR65-4 MCR65-5 MCR65-6 MCR65-7 MCR65-8 MCR65-9 MCR65-10 VRSM 35 75 150 300 400 500 600 700 800 900 Volts Forward current RMS IT(RMS) 55 Amps Peak surge current (one cycle, 60Hz, TC = -40 to +125°C) ITSM 550 Amps Circuit fusing considerations (t = 8.3ms) I2t 1255 A2s Peak gate power PGM 20 Watts Average gate power (Pulse width ≤ 2µs) PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Forward peak gate voltage Reverse peak gate voltage VGFM VGRM 10 Volts Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Mounting torque 30 In. lb. Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case Isolated stud R ӨJC 1.1 °C/W |
Similar Part No. - MCR65-8 |
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Similar Description - MCR65-8 |
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