MCR12LN datasheet(1/4 Pages) DIGITRON

Part #	MCR12LN

Description	SILICON CONTROLLED RECTIFIERS

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Manufacturer	DIGITRON [Digitron Semiconductors]

Direct Link	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20130108

MCR12LD, MCR12LM, MCR12LN

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage(1)

(TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open)

MCR12LD

MCR12LM

MCR12LN

VDRM

VRRM

400

600

800

V

On-state RMS current (180° conduction angles, TC = 80°C)

IT(RMS)

12

A

Peak non-repetitive surge current

(half-cycle, sine wave, 60Hz, TJ = 125°C)

ITSM

100

A

Circuit fusing consideration (t = 8.3ms)

I2t

41

A2s

Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)

PGM

5.0

W

Forward average gate power (t = 8.3ms, TC = 80°C)

PG(AV)

0.5

W

Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C)

IGM

2.0

A

Operating temperature range

TJ

-40 to +125

°C

Storage temperature range

Tstg

-40 to +150

°C

Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative

potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R

ӨJC

2.2

°C/W

Thermal resistance, junction to ambient

R

ӨJA

62.5

°C/W

Maximum lead temperature for soldering

purposes 1/8” from case for 10s

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak forward or reverse blocking current

(VD = Rated VDRM or VRRM, gate open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

-

0.01

2.0

mA

ON CHARACTERISTICS

Peak on-state voltage*

(ITM = 24A)

VTM

-

2.2

V

Gate trigger current (continuous dc)

(VD = 12V, RL = 100Ω)

IGT

2.0

4.0

8.0

mA

Holding current

(

VD = 12V, gate open, initiating current = 200mA)

IH

4.0

10

20

mA

Latch current

(VD = 12V, Ig = 20mA)

IL

6.0

12

30

mA

Gate trigger voltage (continuous dc)

(VD = 12V, RL = 100Ω)

VGT

0.5

0.65

0.8

V

DYNAMIC CHARACTERISTICS

Critical rate of rise of off-state voltage

(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)

dv/dt

100

250

-

V/µs

Critical rate of rise of on-state current

(IPK = 50A, Pw = 40µsec, diG/dt = 1A/µs, Igt = 50mA)

di/dt

-

50

A/µs

* Pulse width ≤ 1.0ms, duty cycle ≤ 2%.

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