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MCR12LN Datasheet(PDF) 1 Page - Digitron Semiconductors |
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MCR12LN Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 4 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130108 MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open) MCR12LD MCR12LM MCR12LN VDRM VRRM 400 600 800 V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 12 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM 100 A Circuit fusing consideration (t = 8.3ms) I2t 41 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 5.0 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2.0 A Operating temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case R ӨJC 2.2 °C/W Thermal resistance, junction to ambient R ӨJA 62.5 °C/W Maximum lead temperature for soldering purposes 1/8” from case for 10s TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward or reverse blocking current (VD = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM - - - - 0.01 2.0 mA ON CHARACTERISTICS Peak on-state voltage* (ITM = 24A) VTM - - 2.2 V Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT 2.0 4.0 8.0 mA Holding current ( VD = 12V, gate open, initiating current = 200mA) IH 4.0 10 20 mA Latch current (VD = 12V, Ig = 20mA) IL 6.0 12 30 mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT 0.5 0.65 0.8 V DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt 100 250 - V/µs Critical rate of rise of on-state current (IPK = 50A, Pw = 40µsec, diG/dt = 1A/µs, Igt = 50mA) di/dt - - 50 A/µs * Pulse width ≤ 1.0ms, duty cycle ≤ 2%. |
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