MCR8SN datasheet(1/4 Pages) DIGITRON

Part #	MCR8SN

Description	SILICON CONTROLLED RECTIFIERS

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	DIGITRON [Digitron Semiconductors]

Direct Link	http://www.digitroncorp.com

Logo

1 / 4 page

DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20121228

MCR8SD, MCR8SM, MCR8SN

SILICON CONTROLLED RECTIFIERS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage(1)

Peak repetitive reverse voltage

(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)

MCR8SD

MCR8SM

MCR8SN

VDRM

VRRM

400

600

800

V

On-state RMS current (180° conduction angles, TC = 80°C)

IT(RMS)

8

A

Peak non-repetitive surge current

(one half-cycle, sine wave, 60Hz, TJ = 110°C)

ITSM

80

A

Circuit fusing (t = 8.3ms)

I2t

26.5

A2s

Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)

PGM

5

W

Forward average gate power (t = 8.3ms, TC = 80°C)

PG(AV)

0.5

W

Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C)

IGM

2

A

Operating temperature range

TJ

-40 to +110

°C

Storage temperature range

Tstg

-40 to +150

°C

Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R

ӨJC

2.2

°C/W

Thermal resistance, junction to ambient

R

ӨJA

62.5

°C/W

Maximum lead temperature for soldering

purposes 1/8” from case for 10s

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak forward blocking current or reverse blocking current(2)

(VD = Rated VDRM or VRRM, RGK = 1kΩ)

TJ = 25°C

TJ = 110°C

IDRM,

IRRM

-

10

500

µA

ON CHARACTERISTICS

Peak on-state voltage(3)

(ITM = 16A)

VTM

-

1.8

V

Gate trigger current (continuous dc) (4)

(VD = 12V, RL = 100Ω)

IGT

5.0

25

200

µA

Holding current (4)

(

VD = 12V, gate open, initiating current = 200mA)

IH

-

0.5

6.0

mA

Latch current (4)

(

VD = 12V, IG = 200µA)

IL

-

0.6

8.0

mA

Gate trigger voltage (continuous dc) (4)

(VD = 12V, RL = 100Ω)

TJ = 25°C

TJ = -40°C

VGT

0.3

-

0.65

-

1.0

1.5

V

* Pulse width ≤ 2.0ms, duty cycle ≤ 2%.

Similar Part No. - MCR8SN

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MCR8SN	58Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors December, 2005 ??Rev. 3
Kersemi Electronic Co.,...	MCR8SN	421Kb / 5P	Silicon Controlled Rectifiers
ON Semiconductor	MCR8SNG	58Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors December, 2005 ??Rev. 3

More results

Similar Description - MCR8SN

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	C122A1	65Kb / 3P	SILICON CONTROLLED RECTIFIERS
Power Innovations Ltd	TIC106	165Kb / 8P	SILICON CONTROLLED RECTIFIERS
Power Innovations Ltd	TICP106	95Kb / 6P	SILICON CONTROLLED RECTIFIERS
ON Semiconductor	MCR12D	92Kb / 8P	Silicon Controlled Rectifiers December, 1999 ??Rev. 2
Transys Electronics	SC12	765Kb / 5P	SILICON CONTROLLED RECTIFIERS
ON Semiconductor	2N6504	50Kb / 8P	Silicon Controlled Rectifiers April, 2001 ??Rev. 4
Motorola, Inc	MCR102	79Kb / 4P	Silicon Controlled Rectifiers
	MCR22	101Kb / 6P	Silicon Controlled Rectifiers
	MCR25	431Kb / 6P	Silicon Controlled Rectifiers
	MCR310	86Kb / 4P	Silicon Controlled Rectifiers
NTE Electronics	NTE5550	20Kb / 2P	Silicon Controlled Rectifiers

More results

MCR8SN Datasheet(PDF) 1 Page - Digitron Semiconductors

MCR8SN Datasheet(HTML) 1 Page - Digitron Semiconductors

Similar Part No. - MCR8SN

Similar Description - MCR8SN

Html Pages

1 2 3 4

Datasheet Download

Link URL