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MCR8SN Datasheet(PDF) 1 Page - Digitron Semiconductors |
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MCR8SN Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 4 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20121228 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) Peak repetitive reverse voltage (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR8SD MCR8SM MCR8SN VDRM VRRM 400 600 800 V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 8 A Peak non-repetitive surge current (one half-cycle, sine wave, 60Hz, TJ = 110°C) ITSM 80 A Circuit fusing (t = 8.3ms) I2t 26.5 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 5 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2 A Operating temperature range TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case R ӨJC 2.2 °C/W Thermal resistance, junction to ambient R ӨJA 62.5 °C/W Maximum lead temperature for soldering purposes 1/8” from case for 10s TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward blocking current or reverse blocking current(2) (VD = Rated VDRM or VRRM, RGK = 1kΩ) TJ = 25°C TJ = 110°C IDRM, IRRM - - - - 10 500 µA ON CHARACTERISTICS Peak on-state voltage(3) (ITM = 16A) VTM - - 1.8 V Gate trigger current (continuous dc) (4) (VD = 12V, RL = 100Ω) IGT 5.0 25 200 µA Holding current (4) ( VD = 12V, gate open, initiating current = 200mA) IH - 0.5 6.0 mA Latch current (4) ( VD = 12V, IG = 200µA) IL - 0.6 8.0 mA Gate trigger voltage (continuous dc) (4) (VD = 12V, RL = 100Ω) TJ = 25°C TJ = -40°C VGT 0.3 - 0.65 - 1.0 1.5 V * Pulse width ≤ 2.0ms, duty cycle ≤ 2%. |
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