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OPA830 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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OPA830 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 37 page OPA830 SBOS263F − AUGUST 2004 − REVISED AUGUST 2008 www.ti.com 5 ELECTRICAL CHARACTERISTICS: VS = +3V Boldface limits are tested at +25 °C. At TA = 25°C, G = +2, and RL = 150Ω to VS/3, unless otherwise noted (see Figure 2). OPA830ID, IDBV TYP MIN/MAX OVER TEMPERATURE TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 0 °C to 70 °C(2) UNITS MIN/ MAX TEST LEVEL (3) AC PERFORMANCE (see Figure 2) Small-Signal Bandwidth G = +2, VO ≤ 0.2VPP 100 72 68 MHz min B G = +5, VO ≤ 0.2VPP 22 17 16 MHz min B G = +10, VO ≤ 0.2VPP 10 8 7 MHz min B Gain-Bandwidth Product G ≥ +10 100 80 76 MHz min B Slew Rate 1V Step 225 140 110 V/ µs min B Rise Time 0.5V Step 3.3 5.5 5.6 ns max B Fall Time 0.5V Step 3.3 5.5 5.6 ns max B Settling Time to 0.1% 1V Step 45 72 87 ns max B Harmonic Distortion VO = 1VPP, f = 5MHz 2nd-Harmonic RL = 150Ω −67 −61 −59 dBc max B RL ≥ 500Ω −67 −61 −59 dBc max B 3rd-Harmonic RL = 150Ω −66 −59 −58 dBc max B RL ≥ 500Ω −77 −59 −58 dBc max B Input Voltage Noise f > 1MHz 9.2 10.2 10.7 nV/ √Hz max B Input Current Noise f > 1MHz 3.5 4.5 5.0 pA/ √Hz max B DC PERFORMANCE(4) Open-Loop Voltage Gain 72 66 65 dB min A Input Offset Voltage ±1.5 ±7 ±8.1 mV max A Average Offset Voltage Drift — ±25 µV/°C max B Input Bias Current VCM = 1.0V +5 +10 +12 µA max A Input Bias Current Drift ±12 nA/ °C max B Input Offset Current VCM = 1.0V ±0.1 ±1 ±1.2 µA max A Input Offset Current Drift — ±5 nA/ °C max B INPUT Least Positive Input Voltage(5) −0.45 −0.4 −0.27 V max A Most Positive Input Voltage(5) 1.2 1.1 1.0 V min A Common-Mode Rejection Ratio (CMRR) Input-Referred 80 75 73 dB min A Input Impedance Differential-Mode 10 2.1 k Ω pF typ C Common-Mode 400 1.2 k Ω pF typ C OUTPUT Least Positive Output Voltage G = +5, RL = 1kΩ to 1.5V 0.08 0.11 0.125 V max A G = +5, RL = 150Ω to 1.5V 0.17 0.39 0.40 V max A Most Positive Output Voltage G = +5, RL = 1kΩ to 1.5V 2.91 2.88 2.85 V min A G = +5, RL = 150Ω to 1.5V 2.82 2.74 2.70 V min A Current Output, Sourcing 30 20 18 mA min A Current Output, Sinking 30 20 18 mA min A Short-Circuit Output Current Output Shorted to Either Supply 45 mA typ C Closed-Loop Output Impedance See Figure 2, f < 100kHz 0.06 Ω typ C POWER SUPPLY Minimum Operating Voltage +2.8 V min B Maximum Operating Voltage +11 +11 V max A Maximum Quiescent Current VS = +3V 3.7 4.0 4.7 mA max A Minimum Quiescent Current VS = +3V 3.7 3.3 3.1 mA min A Power-Supply Rejection Ratio (PSRR) Input-Referred 64 60 58 dB min A THERMAL CHARACTERISTICS Specification: ID, IDBV −40 to +85 °C typ C Thermal Resistance, qJA D SO-8 125 °C/W typ C DBV SOT23-5 150 °C/W typ C (1) Junction temperature = ambient for +25°C specifications. (2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature. (3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current considered positive out of pin. (5) Tested < 3dB below minimum specified CMRR at ± CMIR limits. |
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