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OPA2889IDGSR Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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OPA2889IDGSR Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 38 page ELECTRICAL CHARACTERISTICS: VS = +5V OPA2889 www.ti.com ....................................................................................................................................................... SBOS373B – JUNE 2007 – REVISED AUGUST 2008 At TA = +25°C, RF = 750Ω, G = +2V/V, and RL = 100Ω, unless otherwise noted. OPA2889ID, IDGS MIN/MAX OVER TYP TEMPERATURE 0°C to –40°C to MIN/ TEST PARAMETER CONDITIONS +25°C +25°C(2) +70°C(3) +85°C(3) UNITS MAX LEVEL(1) AC PERFORMANCE Small-Signal Bandwidth G = +1V/V, VO = 100mVPP, RF = 0Ω 100 MHz typ C G = +2V/V, VO = 100mVPP 50 30 26 22 MHz min B G = +10V/V, VO = 100mVPP 7 5.5 4.5 4 MHz min B Gain Bandwidth Product G > +20V/V 70 55 45 40 MHz min B Bandwidth for 0.1dB Flatness G = +2V/V, VO = 100mVPP 14 MHz typ C Peaking at a Gain of +1V/V VO < 100mVPP , RF = 0 Ω 1 dB typ C Large-Signal Bandwidth G = +2V/V, VO = 2VPP 60 MHz typ C Slew Rate G = +2V/V, VO = 2V Step 200 125 110 100 V/ µs min B Rise-and-Fall Time 0.2V Step 6.5 ns typ C Settling Time to 0.02% G = +1V/V, VO = 2V Step 38 ns typ C Settling Time to 0.1% 27 ns typ C Harmonic Distortion G = +2V/V, f = 1MHz, VO = 2VPP 2nd-Harmonic RL = 200Ω –71 –61 –58 –56 dBc max B RL ≥ 500Ω –76 –69 –64 –61 dBc max B 3rd-Harmonic RL = 200Ω –76 –70 –66 –64 dBc max B RL ≥ 500Ω –76 –74 –69 –66 dBc max B Input Voltage Noise f > 100kHz 8.5 10.5 12 12.5 nV/ √Hz max B Input Current Noise f > 100kHz 0.7 1 1.1 1.2 pA/ √Hz max B Differential Gain G = +2V/V, VO = 1.4VPP, RL = 150Ω 0.06 % typ C Differential Phase G = +2V/V, VO = 1.4VPP, RL = 150Ω 0.04 ° typ C Channel-to-Channel Crosstalk f = 5MHz, Input-referred –85 dB typ C DC PERFORMANCE(4) Open-Loop Voltage Gain (AOL) VO = 0V, RL = 100Ω 64 58 56 55 dB min A Input Offset Voltage VCM = 0V ±1.5 ±5 ±5.9 ±6.3 mV max A Average Offset Voltage Drift VCM = 0V ±20 ±20 µV/°C max B Input Bias Current VCM = 0V ±150 ±800 ±890 ±930 nA max A Average Input Bias Current Drift VCM = 0V ±2 ±2 nA/°C max B Input Offset Current VCM = 0V ±50 ±250 ±275 ±285 nA max A Average Input Offset Current VCM = 0V ±0.5 ±0.5 nA/°C max B Drift INPUT Most Positive Input Voltage 4 3.9 3.8 3.75 V min A Least Positive Input Voltage 1 1.1 1.2 1.25 V max A Common-Mode Rejection Ratio VCM = 0V, Input-referred 68 58 57 56 dB min A (CMRR) Input Impedance Differential VCM = 0V 3.5 || 0.5 M Ω || pF typ C Common-Mode VCM = 0V 170 || 0.8 M Ω || pF typ C (1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for +25°C tested specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +4°C at high temperature limit for over temperature specifications. (4) Current is considered positive out-of-node. VCM is the input common-mode voltage. Copyright © 2007–2008, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): OPA2889 |
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