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THS4531IRUNR Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # THS4531IRUNR
Description  Ultra Low Power, Rail-to-Rail Output, Fully-Differential Amplifier
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

THS4531IRUNR Datasheet(HTML) 2 Page - National Semiconductor (TI)

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THS4531
SLOS358B – SEPTEMBER 2011 – REVISED MARCH 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION(1)
SPECIFIED
CHANNEL
PACKAGE-
PACKAGE
PACKAGE
ORDERING
TRANSPORT MEDIA,
PRODUCT
TEMPERATURE
COUNT
LEAD
DESIGNATOR
MARKING
NUMBER
QUANTITY
RANGE
1
T4531
THS4531ID
Rails, 75
SOIC-8
D
–40°C to +125°C
1
T4531
THS4531IDR
Tape and reel, 2500
1
4531
THS4531IDGK
Rails, 80
THS4531
VSSOP-8
DGK
–40°C to +125°C
1
4531
THS4531IDGKR
Tape and reel, 2500
1
4531
THS4531IRUNT
Tape and reel, 250
WQFN-10
RUN
–40°C to +125°C
1
4531
THS4531IRUNR
Tape and reel, 3000
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
VALUE
UNITS
Supply voltage, VS– to VS+
5.5
Input/output voltage, VIN±, VOUT±, and VOCM pins
(VS–) – 0.7 to (VS+) + 0.7
V
Differential input voltage, VID
1
V
Continuous output current, IO
50
mA
Continuous input current, Ii
0.75
mA
Continuous power dissipation
See Thermal Information
Maximum junction temperature, TJ
150
°C
Operating free-air temperature range, TA
–40 to +125
°C
Storage temperature range, Tstg
–65 to +150
°C
Human body model (HBM)
3000
V
Electrostatic
discharge (ESD)
Charge device model (CDM)
500
V
ratings:
Machine model (MM)
200
V
THERMAL INFORMATION
THS4531
THS4531
THS4531
VSSOP
SOIC
WQFN
THERMAL METRIC(1)
(MSOP)
UNITS
(P)
(RUN)
(DGK)
8 PINS
8 PINS
10 PINS
θJA
Junction-to-ambient thermal resistance
133
198
163
θJCtop
Junction-to-case (top) thermal resistance
78
84
66
θJB
Junction-to-board thermal resistance
73
120
113
°C/W
ψJT
Junction-to-top characterization parameter
26
19
17
ψJB
Junction-to-board characterization parameter
73
118
113
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
2
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Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): THS4531


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