IXBN42N170A datasheet(6/6 Pages) IXYS

Part #	IXBN42N170A

Description	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBN42N170A

IXYS REF: B_42N170A(7N)11-12-12

Fig. 22. Inductive Turn-on Switching Times

vs. Collector Current

0

20

40

60

80

100

120

20

30

40

50

60

70

80

IC - Amperes

16

18

20

22

24

26

28

t r i

t d(on) - - - -

RG = 1Ω , VGE = 15V

VCE = 850V

TJ = 25ºC

TJ = 125ºC

Fig. 23. Inductive Turn-on

Switching Times vs. Junction Temperature

0

20

40

60

80

100

120

140

160

25

35

45

55

65

75

85

95

105

115

125

TJ - Degrees Centigrade

18

19

20

21

22

23

24

25

26

t r i

t d(on) - - - -

RG = 1Ω , VGE = 15V

VCE = 850V

I C = 42A

I C = 84A

Fig. 21. Inductive Turn-on Switching Times

vs. Gate Resistance

0

20

40

60

80

100

120

140

160

123

456

7

8

9

10

RG - Ohms

14

18

22

26

30

34

38

42

46

t r i

t d(on) - - - -

TJ = 125ºC, VGE = 15V

VCE = 850V

I C = 42A

I C = 84A

Fig. 19. Inductive Turn-off

Switching Times vs. Collector Current

0

20

40

60

80

100

120

140

20

30

40

50

60

70

80

IC - Amperes

120

140

160

180

200

220

240

260

t f i

t d(off) - - - -

RG = 1Ω , VGE = 15V

VCE = 850V

TJ = 125ºC

TJ = 25ºC

Fig. 20. Inductive Turn-off

Switching Times vs. Junction Temperature

20

40

60

80

100

120

25

35

45

55

65

75

85

95

105

115

125

TJ - Degrees Centigrade

120

140

160

180

200

220

t f i

t d(off) - - - -

RG = 1Ω , VGE = 15V

VCE = 850V

I C = 42A, 84A

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