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LMH6639MAXNOPB Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LMH6639MAXNOPB Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 26 page  LMH6639 www.ti.com SNOS989G – JANUARY 2002 – REVISED MARCH 2013 5V Electrical Characteristics (continued) Unless otherwise specified, all limits ensured for at TJ = 25°C, V + = 5V, V− = 0V, V O = VCM = V +/2, and R L = 2kΩ to V +/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min(1) Typ (2) Max(1) Units ISC Output Short Circuit Current Sourcing to V+/2(7) 100 160 79 mA Sinking from V+/2(7) 120 190 85 IOUT Output Current VO = 0.5V from either supply 110 mA PSRR Power Supply Rejection Ratio See(6) 72 96 dB IS Supply Current (Enabled) No Load 3.6 5.8 8.0 mA Supply Current (Disabled) 0.40 0.8 1.0 TH_SD Threshold Voltage for Shutdown V+ −1.65 V Mode I_SD PIN Shutdown Pin Input Current SD Pin Connected to 0V(5) −30 μA TON On Time after Shutdown 83 nsec TOFF Off Time to Shutdown 160 nsec ROUT Output Resistance Closed Loop RF = 10kΩ, f = 1kHz, AV = −1 29 m Ω RF = 10kΩ, f = 1MHz, AV = −1 253 (7) Short circuit test is a momentary test. ±5V Electrical Characteristics Unless otherwise specified, all limits ensured for at TJ = 25°C, VSUPPLY = ±5V, VO = VCM = GND, and RL = 2kΩ to V +/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min(1) Typ(2) Max(1) Units BW −3dB BW AV = +1 150 228 MHz AV = −1 65 BW0.1dB 0.1dB Gain Flatness RF = 2.26kΩ, RL = 1kΩ 18 MHz FPBW Full Power Bandwidth AV = +1, VOUT = 2VPP, −1dB 29 MHz GBW Gain Bandwidth Product AV = +1 90 MHz en Input-Referred Voltage Noise RF = 33kΩ f = 10kHz 19 nV/ √Hz f = 1MHz 16 in Input-Referred Current Noise RF = 1MΩ f = 10kHz 1.13 pA/ √Hz f = 1MHz 0.34 THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = +2, −71.2 dBc RL = 1kΩ DG Differential Gain NTSC, AV = +2 0.11 % RL = 150Ω DP Differential Phase NTSC, AV = +2 0.053 deg RL = 150Ω TS Settling Time VO = 2VPP, ±0.1% 33 ns SR Slew Rate AV = −1 (3) 140 200 V/µs VOS Input Offset Voltage 1.03 5 mV 7 TC VOS Input Offset Voltage Drift See(4) 8 µV/°C IB Input Bias Current See(5) −1.40 −2.6 µA −3.25 (1) All limits are ensured by testing or statistical analysis. (2) Typical values represent the most likely parametric norm. (3) Slew rate is the average of the rising and falling slew rates. (4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change. (5) Positive current corresponds to current flowing into the device. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LMH6639 |
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