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THS4502IDGNR Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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THS4502IDGNR Datasheet(HTML) 7 Page - National Semiconductor (TI) |
7 / 49 page THS4502 THS4503 www.ti.com SLOS352E – APRIL 2002 – REVISED OCTOBER 2011 ELECTRICAL CHARACTERISTICS VS = 5 V (continued) Rf = Rg = 499 Ω, RL = 800 Ω, G = +1, Single-ended input unless otherwise noted. THS4502 AND THS4503 TYP OVER TEMPERATURE(1) MIN/T PARAMETER TEST CONDITIONS YP/M 0 °C to -40 °C to 25 °C 25 °C UNITS AX 70 °C 85 °C POWER DOWN (THS4502 ONLY) Enable voltage threshold Device enabled ON above 2.1 V 2.1 V Min Disable voltage threshold Device disabled OFF below 0.7 V 0.7 V Max Power-down quiescent current 600 800 1200 1200 µA Max Input bias current 100 125 140 140 µA Max Input impedance 50 || 1 k Ω || pF Typ Turnon time delay 1000 ns Typ Turnoff time delay 800 ns Typ Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s): THS4502 THS4503 |
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