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THS4524MDBTEP Datasheet(PDF) 9 Page - National Semiconductor (TI) |
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THS4524MDBTEP Datasheet(HTML) 9 Page - National Semiconductor (TI) |
9 / 48 page 1000 10000 100000 1000000 125 130 135 140 145 150 Continuous T (°C) J Electromigration Fail Mode (Output current = 40 mA) Electromigration Fail Mode (Output current = 25 mA) Electromigration Fail Mode (Output current = 15 mA) Wirebond Life THS4524-EP www.ti.com SBOS609A – JUNE 2012 – REVISED AUGUST 2013 A. See datasheet for absolute maximum and minimum recommended operating conditions. B. Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life). Figure 1. Electromigration Fail Mode/Wirebond Life Derating Chart Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links :THS4524-EP |
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