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DB2F200N4S Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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DB2F200N4S Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 4 page  Copyright@Dawin Electronics Corp. All right reserved DB2F200N4S DBC2F200N4S Jan. 2007 Thermal Characteristics Symbol Parameter Values Unit Conditions Rth(j-c) Thermal Resistance Junction to Case Min. Typ. Max. 0.18 ℃ /W - - Electrical Characteristics @ Tj=25℃ (unless otherwise specified) Symbol Parameter Values Unit Conditions VR VFM IRRM Trr Cathode Anode Breakdown Voltage Maximum Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time IR = 100uA IFM = 200A, Tc = 25℃ IFM = 200A, Tc =100℃ TC = 100℃, VRRM applied IFM = 200A, VR = 200V di/dt=-100A/us] Min. Typ. Max. - 1.3 1.1 2.0 200 - V V V mA ns ns 400 - - - - - - 1.05 0.95 - 150 220 Tc = 25℃ Tc = 100℃ 2/4 |
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