GA301 datasheet(1/3 Pages) DIGITRON

Part #	GA301

Description	SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

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Manufacturer	DIGITRON [Digitron Semiconductors]

Direct Link	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

GA300, GA300A, GA301, GA301A

SILICON CONTROLLED RECTIFIER

NANOSECOND SWITCHING PLANAR

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RANKINGS

GA300

GA300A

GA301

GA301A

Repetitive Peak Off State Voltage

VDRM

60V

100V

Repetitive Peak On-State Current

ITRM

Up to 100A

Peak Gate Current

IGM

250 mA

Average Gate Current

IG(AV)

25 mA

Reverse Gate Current

IGR

3 mA

Reverse Gate Voltage

VGR

5 V

Storage Temperature Range

-65 to +150°C

Operating Temperature Range

0 to +125°C

ELECTRICAL CHARACTERISTICS (@ 25°C unless otherwise noted)

Test

Symbol

Min

Typical

Max

Units

Conditions

Delay Time

td

-

20

10

30

-

ns

IG = 20 mA, IT = 1 A

IG = 30 mA, IT = 1A

Rise Time (Note 1)

GA300, GA300A

tr

-

15

25

-

ns

VD = 60 V, IT = 1 A

VD = 60 V, IT = 30 A (Note 1)

Rise Time (Note 1)

GA301, GA301A

tr

-

10

20

-

ns

VD = 100 V, IT = 1A

VD = 100 V, IT = 30 A (Note 1)

Circuit Commutated Turn Off Time

GA300, GA301

0.8

2.0

GA300A, GA301A

tq

-

0.3

0.5

µs

IT = 1 A, IR = 1 A, RGK = 1K

Gate Trigger On Pulse Width

tpg(on)

-

0.02

0.05

µs

IG = 10 mA, IT = 1 A

Off-State Current

IDRM

-

0.01

20

0.1

100

µA

VDRM = Rating, RGK = 1K, T = 25°C

VDRM = Rating, RGK = 1K, T = 125°C

Reverse Current (Note 2)

IRRM

-

1.0

10

mA

VRRM = 30 V, RGK = 1 K (Note 2)

Gate Trigger Voltage

VGT

0.4

0.10

0.6

0.2

0.75

-

V

VD = 5V, RGS = 100 Ω, T = 25°C

VD = 5 V, RGS = 100 Ω, T = 125°C

Gate Trigger Current

IGT

-

10

200

µA

VD = 5 V, RGS = 10 K

On-State Voltage

VT

-

1.1

1.5

V

IT = 2 A

Off-State Voltage – Critical Rate of Rise

dV/dt

15

30

-

V/µs

VD = 30 V, RGK = 1 K

Reverse Gate Current

IGR

-

0.01

0.1

mA

VGR = 5 V

Holding Current

IH

0.3

0.05

2.0

0.4

5.0

-

mA

VD = 5V, RGK = 1 K, T = 25°C

VD = 5 V, RGK = 1 K, T = 125°C

Note 1 – IG = 10 mA, Pulse Test: Duty Cycle < 1%.

Note 2 – Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous

basis.

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20130116

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