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C122B Datasheet(PDF) 1 Page - Digitron Semiconductors |
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C122B Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 4 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 C122 SERIES 8A SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Characteristics C122F C122A C122B C122C C122D C122E C122M Units VRROM VDROM 50 100 200 300 400 500 600 V IT(RMS) (TC = 75°C, θ = 180°) 8 A ITSM for one full cycle of applied principal voltage 400 Hz 60 Hz 50 Hz 200 100 85 A di/dt VD = VDROM, IGT = 80mA, tr = 0.5µs 100 A/µs I2t TJ = -65 to +100°C, t = 1 to 8.3 ms 40 A2s PGM * (for 10µs max) 16 W PG(AV) * (averaging time = 10 ms max) 0.5 W Tstg -65 to +150 °C TC -65 to +100 °C TT During soldering for 10 s maximum 250 °C These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. * Any values of peak gate current or peak gate voltage which result in equal or lower power are permissible. ELECTRICAL CHARACTERISTICS Limits Characteristics Min Typ Max Units IDOM or IROM VD = VDROM or VR = VRROM, TC = 100°C - 0.1 0.5 mA VT IT = 16A, TC = 25°C - 1.45 1.83 V IGT VD = 12V (DC), RL = 30Ω, TC = 25°C - 10 15 mA VGT VD = 12V (DC), RL = 30Ω, TC = 25°C - 1.0 1.5 V IHO TC = 25°C - 20 30 mA dv/dt VD = VDROM exponential voltage rise, TC = 100°C 10 100 - V/µs tgt VD = VDROM, IT = 4.5A, IT = 2A, IGT = 80mA, 0.1 µs rise time, TC = 25°C - 1.6 2.5 µs tq VD = VDROM, IT = 2A, tp = 50µs, dv/dt = 200V/µs, di/dt = -10A/µs, IGT = 200mA @ tON, TC = 75°C - 10 35 µs R θJC - - 1.8 R θJA - - 75 °C/W sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130123 |
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